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Article: Formation mechanism of mirror twin grain boundaries in molecular beam epitaxy grown monolayer WSe2–MoSe2 lateral heterojunctions
Title | Formation mechanism of mirror twin grain boundaries in molecular beam epitaxy grown monolayer WSe2–MoSe2 lateral heterojunctions |
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Authors | |
Issue Date | 2-May-2023 |
Publisher | IOP Publishing |
Citation | 2D Materials, 2023, v. 10, n. 3, p. 1-8 How to Cite? |
Abstract | Mirror twin grain boundary (MTB) defects, being a special type of high-symmetry one-dimensional (1D) defects in two-dimensional atomically thin transition metal dichalcogenides (TMDCs), have received considerable interest due to their unique structures and intriguing 1D properties. However, formation and distribution of MTBs in hybrid TMDC materials such as heterojunction remain scarcely studied. Herein, we investigate the spatial distribution, lattice registry and formation mechanism of MTBs in molecular beam epitaxy grown monolayer WSe2–MoSe2 lateral heterojunctions using atomic-resolution annular dark-field scanning transmission electron microscopy (ADF-STEM). MTBs manifest a much higher density in MoSe2 than in WSe2 domains with a few of them spanning coherently across the domain interface. Compositionally, a Mo-dominant rather than W-dominant configuration was observed in those MTBs located in WSe2 domains and its origin can be attributed to the preferable Mo substitution to W along the MTBs occurring at the later MoSe2 growth period. This proposed mechanism is supported by ab-initio density functional theory calculations and substitution dynamics captured by in-situ ADF-STEM. The present study deepens our understanding of MTBs in heterostructured TMDCs, which may also serve as an excellent platform for the exploration of intriguing 1D physics. |
Persistent Identifier | http://hdl.handle.net/10722/328489 |
ISSN | 2023 Impact Factor: 4.5 2023 SCImago Journal Rankings: 1.483 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Yu, ZB | - |
dc.contributor.author | Dai, YW | - |
dc.contributor.author | Komsa, HP | - |
dc.contributor.author | Ren, XB | - |
dc.contributor.author | Yuan, MF | - |
dc.contributor.author | Xie, MH | - |
dc.contributor.author | Jin, CH | - |
dc.date.accessioned | 2023-06-28T04:45:25Z | - |
dc.date.available | 2023-06-28T04:45:25Z | - |
dc.date.issued | 2023-05-02 | - |
dc.identifier.citation | 2D Materials, 2023, v. 10, n. 3, p. 1-8 | - |
dc.identifier.issn | 2053-1583 | - |
dc.identifier.uri | http://hdl.handle.net/10722/328489 | - |
dc.description.abstract | <p>Mirror twin grain boundary (MTB) defects, being a special type of high-symmetry one-dimensional (1D) defects in two-dimensional atomically thin transition metal dichalcogenides (TMDCs), have received considerable interest due to their unique structures and intriguing 1D properties. However, formation and distribution of MTBs in hybrid TMDC materials such as heterojunction remain scarcely studied. Herein, we investigate the spatial distribution, lattice registry and formation mechanism of MTBs in molecular beam epitaxy grown monolayer WSe<sub>2</sub>–MoSe<sub>2</sub> lateral heterojunctions using atomic-resolution annular dark-field scanning transmission electron microscopy (ADF-STEM). MTBs manifest a much higher density in MoSe<sub>2</sub> than in WSe<sub>2</sub> domains with a few of them spanning coherently across the domain interface. Compositionally, a Mo-dominant rather than W-dominant configuration was observed in those MTBs located in WSe<sub>2</sub> domains and its origin can be attributed to the preferable Mo substitution to W along the MTBs occurring at the later MoSe<sub>2</sub> growth period. This proposed mechanism is supported by <em>ab-initio</em> density functional theory calculations and substitution dynamics captured by <em>in-situ</em> ADF-STEM. The present study deepens our understanding of MTBs in heterostructured TMDCs, which may also serve as an excellent platform for the exploration of intriguing 1D physics.<br></p> | - |
dc.language | eng | - |
dc.publisher | IOP Publishing | - |
dc.relation.ispartof | 2D Materials | - |
dc.title | Formation mechanism of mirror twin grain boundaries in molecular beam epitaxy grown monolayer WSe2–MoSe2 lateral heterojunctions | - |
dc.type | Article | - |
dc.identifier.doi | 10.1088/2053-1583/accd06 | - |
dc.identifier.volume | 10 | - |
dc.identifier.issue | 3 | - |
dc.identifier.spage | 1 | - |
dc.identifier.epage | 8 | - |
dc.identifier.eissn | 2053-1583 | - |
dc.identifier.isi | WOS:000980289400001 | - |
dc.identifier.issnl | 2053-1583 | - |