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Article: The annealing temperature dependence of the RRAM effect and the oxygen vacancy mechanism for double perovskite Bi2FeCrO6 film

TitleThe annealing temperature dependence of the RRAM effect and the oxygen vacancy mechanism for double perovskite Bi2FeCrO6 film
Authors
KeywordsAnnealing temperature
BFCO
Oxygen vacancy mechanism
Resistive switching behavior
Sol-gel
Issue Date15-Apr-2023
PublisherElsevier
Citation
Vacuum, 2023, v. 213, p. 1-9 How to Cite?
AbstractResistive random access memory (RRAM) is the most potentially nonvolatile memory of the next generation. In this paper, the double perovskite Bi2FeCrO6 (BFCO) thin films were prepared on FTO/glass using the sol-gel method. And, the resistive switching (RS) phenomena were observed in the Au/BFCO/FTO/glass device annealed at different temperatures. Moreover, the RS behaviors and the mechanism of the Au/BFCO/FTO device were analyzed and discussed, and the RS behaviors could be due to the interaction between the interfacial barrier and oxygen vacancies, and the change of RRAM performance under the annealing temperatures can be attributed to the crystallinity and oxygen vacancy defect content in double perovskite BFCO films, so that, the largest and most stable switching ratios of more than 102 for the BFCO film is achieved annealed at 700 degrees C. These findings will help us design and fabricate the multiferroic BFCO-based resistive switching memory devices.
Persistent Identifierhttp://hdl.handle.net/10722/331112
ISSN
2023 Impact Factor: 3.8
2023 SCImago Journal Rankings: 0.705
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorTang, ZH-
dc.contributor.authorFang, JL-
dc.contributor.authorLai, XC-
dc.contributor.authorHu, SC-
dc.contributor.authorYao, DJ-
dc.contributor.authorZhang, L-
dc.contributor.authorJiang, YP-
dc.contributor.authorLiu, QX-
dc.contributor.authorTang, XG-
dc.contributor.authorFan, JM-
dc.contributor.authorGao, J-
dc.date.accessioned2023-09-21T06:52:51Z-
dc.date.available2023-09-21T06:52:51Z-
dc.date.issued2023-04-15-
dc.identifier.citationVacuum, 2023, v. 213, p. 1-9-
dc.identifier.issn0042-207X-
dc.identifier.urihttp://hdl.handle.net/10722/331112-
dc.description.abstractResistive random access memory (RRAM) is the most potentially nonvolatile memory of the next generation. In this paper, the double perovskite Bi2FeCrO6 (BFCO) thin films were prepared on FTO/glass using the sol-gel method. And, the resistive switching (RS) phenomena were observed in the Au/BFCO/FTO/glass device annealed at different temperatures. Moreover, the RS behaviors and the mechanism of the Au/BFCO/FTO device were analyzed and discussed, and the RS behaviors could be due to the interaction between the interfacial barrier and oxygen vacancies, and the change of RRAM performance under the annealing temperatures can be attributed to the crystallinity and oxygen vacancy defect content in double perovskite BFCO films, so that, the largest and most stable switching ratios of more than 102 for the BFCO film is achieved annealed at 700 degrees C. These findings will help us design and fabricate the multiferroic BFCO-based resistive switching memory devices.-
dc.languageeng-
dc.publisherElsevier-
dc.relation.ispartofVacuum-
dc.subjectAnnealing temperature-
dc.subjectBFCO-
dc.subjectOxygen vacancy mechanism-
dc.subjectResistive switching behavior-
dc.subjectSol-gel-
dc.titleThe annealing temperature dependence of the RRAM effect and the oxygen vacancy mechanism for double perovskite Bi2FeCrO6 film-
dc.typeArticle-
dc.identifier.doi10.1016/j.vacuum.2023.112082-
dc.identifier.scopuseid_2-s2.0-85152394244-
dc.identifier.volume213-
dc.identifier.spage1-
dc.identifier.epage9-
dc.identifier.eissn1879-2715-
dc.identifier.isiWOS:000984600300001-
dc.publisher.placeOXFORD-
dc.identifier.issnl0042-207X-

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