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Article: Oriented lateral growth of two-dimensional materials on c-plane sapphire

TitleOriented lateral growth of two-dimensional materials on c-plane sapphire
Authors
Issue Date20-Jul-2023
PublisherNature Research
Citation
Nature Nanotechnology, 2023 How to Cite?
Abstract

Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) represent the ultimate thickness for scaling down channel materials. They provide a tantalizing solution to push the limit of semiconductor technology nodes in the sub-1 nm range. One key challenge with 2D semiconducting TMD channel materials is to achieve large-scale batch growth on insulating substrates of single crystals with spatial homogeneity and compelling electrical properties. Recent studies have claimed the epitaxy growth of wafer-scale, single-crystal 2D TMDs on a c-plane sapphire substrate with deliberately engineered off-cut angles. It has been postulated that exposed step edges break the energy degeneracy of nucleation and thus drive the seamless stitching of mono-oriented flakes. Here we show that a more dominant factor should be considered: in particular, the interaction of 2D TMD grains with the exposed oxygen-aluminium atomic plane establishes an energy-minimized 2D TMD-sapphire configuration. Reconstructing the surfaces of c-plane sapphire substrates to only a single type of atomic plane (plane symmetry) already guarantees the single-crystal epitaxy of monolayer TMDs without the aid of step edges. Electrical results evidence the structural uniformity of the monolayers. Our findings elucidate a long-standing question that curbs the wafer-scale batch epitaxy of 2D TMD single crystals-an important step towards using 2D materials for future electronics. Experiments extended to perovskite materials also support the argument that the interaction with sapphire atomic surfaces is more dominant than step-edge docking.


Persistent Identifierhttp://hdl.handle.net/10722/331171
ISSN
2023 Impact Factor: 38.1
2023 SCImago Journal Rankings: 14.577
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorFu, JH-
dc.contributor.authorMin, JC-
dc.contributor.authorChang, CK-
dc.contributor.authorTseng, CC-
dc.contributor.authorWang, QX-
dc.contributor.authorSugisaki, H-
dc.contributor.authorLi, CY-
dc.contributor.authorChang, YM-
dc.contributor.authorAlnami, I-
dc.contributor.authorSyong, WR-
dc.contributor.authorLin, C-
dc.contributor.authorFang, FE-
dc.contributor.authorZhao, L-
dc.contributor.authorLo, TH-
dc.contributor.authorLai, CS-
dc.contributor.authorChiu, WS-
dc.contributor.authorJian, ZS-
dc.contributor.authorChang, WH-
dc.contributor.authorLu, YJ-
dc.contributor.authorShih, KM-
dc.contributor.authorLi, LJ-
dc.contributor.authorWan, Y-
dc.contributor.authorShi, YM-
dc.contributor.authorTung, V-
dc.date.accessioned2023-09-21T06:53:21Z-
dc.date.available2023-09-21T06:53:21Z-
dc.date.issued2023-07-20-
dc.identifier.citationNature Nanotechnology, 2023-
dc.identifier.issn1748-3387-
dc.identifier.urihttp://hdl.handle.net/10722/331171-
dc.description.abstract<p>Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) represent the ultimate thickness for scaling down channel materials. They provide a tantalizing solution to push the limit of semiconductor technology nodes in the sub-1 nm range. One key challenge with 2D semiconducting TMD channel materials is to achieve large-scale batch growth on insulating substrates of single crystals with spatial homogeneity and compelling electrical properties. Recent studies have claimed the epitaxy growth of wafer-scale, single-crystal 2D TMDs on a c-plane sapphire substrate with deliberately engineered off-cut angles. It has been postulated that exposed step edges break the energy degeneracy of nucleation and thus drive the seamless stitching of mono-oriented flakes. Here we show that a more dominant factor should be considered: in particular, the interaction of 2D TMD grains with the exposed oxygen-aluminium atomic plane establishes an energy-minimized 2D TMD-sapphire configuration. Reconstructing the surfaces of c-plane sapphire substrates to only a single type of atomic plane (plane symmetry) already guarantees the single-crystal epitaxy of monolayer TMDs without the aid of step edges. Electrical results evidence the structural uniformity of the monolayers. Our findings elucidate a long-standing question that curbs the wafer-scale batch epitaxy of 2D TMD single crystals-an important step towards using 2D materials for future electronics. Experiments extended to perovskite materials also support the argument that the interaction with sapphire atomic surfaces is more dominant than step-edge docking.</p>-
dc.languageeng-
dc.publisherNature Research-
dc.relation.ispartofNature Nanotechnology-
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.titleOriented lateral growth of two-dimensional materials on c-plane sapphire-
dc.typeArticle-
dc.identifier.doi10.1038/s41565-023-01445-9-
dc.identifier.pmid37474684-
dc.identifier.scopuseid_2-s2.0-85165172659-
dc.identifier.eissn1748-3395-
dc.identifier.isiWOS:001032687300003-
dc.publisher.placeBERLIN-
dc.identifier.issnl1748-3387-

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