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Article: Interfacial Reconstructed Layer Controls the Orientation of Monolayer Transition-Metal Dichalcogenides

TitleInterfacial Reconstructed Layer Controls the Orientation of Monolayer Transition-Metal Dichalcogenides
Authors
Keywordsepitaxial growth
interlayer reconstruction
molybdenum disulfide
transition-metal dichalcogenides
two-dimensional materials
Issue Date30-May-2023
PublisherAmerican Chemical Society
Citation
ACS Nano, 2023, v. 17, n. 11, p. 10010-10018 How to Cite?
Abstract

Growingcontinuous monolayer films of transition-metaldichalcogenides(TMDs) without the disruption of grain boundaries is essential torealize the full potential of these materials for future electronicsand optoelectronics, but it remains a formidable challenge. It isgenerally believed that controlling the TMDs orientations on epitaxialsubstrates stems from matching the atomic registry, symmetry, andpenetrable van der Waals forces. Interfacial reconstruction withinthe exceedingly narrow substrate-epilayer gap has been anticipated.However, its role in the growth mechanism has not been intensivelyinvestigated. Here, we report the experimental conformation of aninterfacial reconstructed (IR) layer within the substrate-epilayergap. Such an IR layer profoundly impacts the orientations of nucleatingTMDs domains and, thus, affects the materials' properties.These findings provide deeper insights into the buried interface thatcould have profound implications for the development of TMD-basedelectronics and optoelectronics.


Persistent Identifierhttp://hdl.handle.net/10722/331172
ISSN
2023 Impact Factor: 15.8
2023 SCImago Journal Rankings: 4.593
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorAljarb, A-
dc.contributor.authorMin, JC-
dc.contributor.authorHakami, M-
dc.contributor.authorFu, JH-
dc.contributor.authorAlbaridy, R-
dc.contributor.authorWan, Y-
dc.contributor.authorLopatin, S-
dc.contributor.authorKaltsas, D-
dc.contributor.authorNaphade, D-
dc.contributor.authorYengel, E-
dc.contributor.authorHedhili, MN-
dc.contributor.authorSait, R-
dc.contributor.authorEmwas, AH-
dc.contributor.authorKutbee, A-
dc.contributor.authorAlsabban, M-
dc.contributor.authorHuang, KW-
dc.contributor.authorShih, KM-
dc.contributor.authorTsetseris, L-
dc.contributor.authorAnthopoulos, TD-
dc.contributor.authorTung, VC-
dc.contributor.authorLi, LJ-
dc.date.accessioned2023-09-21T06:53:22Z-
dc.date.available2023-09-21T06:53:22Z-
dc.date.issued2023-05-30-
dc.identifier.citationACS Nano, 2023, v. 17, n. 11, p. 10010-10018-
dc.identifier.issn1936-0851-
dc.identifier.urihttp://hdl.handle.net/10722/331172-
dc.description.abstract<p>Growingcontinuous monolayer films of transition-metaldichalcogenides(TMDs) without the disruption of grain boundaries is essential torealize the full potential of these materials for future electronicsand optoelectronics, but it remains a formidable challenge. It isgenerally believed that controlling the TMDs orientations on epitaxialsubstrates stems from matching the atomic registry, symmetry, andpenetrable van der Waals forces. Interfacial reconstruction withinthe exceedingly narrow substrate-epilayer gap has been anticipated.However, its role in the growth mechanism has not been intensivelyinvestigated. Here, we report the experimental conformation of aninterfacial reconstructed (IR) layer within the substrate-epilayergap. Such an IR layer profoundly impacts the orientations of nucleatingTMDs domains and, thus, affects the materials' properties.These findings provide deeper insights into the buried interface thatcould have profound implications for the development of TMD-basedelectronics and optoelectronics.</p>-
dc.languageeng-
dc.publisherAmerican Chemical Society-
dc.relation.ispartofACS Nano-
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.subjectepitaxial growth-
dc.subjectinterlayer reconstruction-
dc.subjectmolybdenum disulfide-
dc.subjecttransition-metal dichalcogenides-
dc.subjecttwo-dimensional materials-
dc.titleInterfacial Reconstructed Layer Controls the Orientation of Monolayer Transition-Metal Dichalcogenides-
dc.typeArticle-
dc.identifier.doi10.1021/acsnano.2c12103-
dc.identifier.pmid37249346-
dc.identifier.scopuseid_2-s2.0-85162870794-
dc.identifier.volume17-
dc.identifier.issue11-
dc.identifier.spage10010-
dc.identifier.epage10018-
dc.identifier.eissn1936-086X-
dc.identifier.isiWOS:001006633600001-
dc.publisher.placeWASHINGTON-
dc.identifier.issnl1936-0851-

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