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Article: Nanoscale molecular-switch crossbar circuits

TitleNanoscale molecular-switch crossbar circuits
Authors
Issue Date2003
Citation
Nanotechnology, 2003, v. 14, n. 4, p. 462-468 How to Cite?
AbstractMolecular electronics offer an alternative pathway to construct nanoscale circuits in which the critical dimension is naturally associated with molecular sizes. We describe the fabrication and testing of nanoscale molecular-electronic circuits that comprise a molecular monolayer of [2]rotaxanes sandwiched between metal nanowires to form an 8 × 8 crossbar within a 1 μm2 area. The resistance at each cross point of the crossbar can be switched reversibly. By using each cross point as an active memory cell, crossbar circuits were operated as rewritable, nonvolatile memory with a density of 6.4 Obits cm-2. By setting the resistances at specific cross points, two 4 × 4 subarrays of the crossbar were configured to be a nanoscale demultiplexer and multiplexer that were used to read memory bits in a third subarray.
Persistent Identifierhttp://hdl.handle.net/10722/332527
ISSN
2023 Impact Factor: 2.9
2023 SCImago Journal Rankings: 0.631
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorChen, Yong-
dc.contributor.authorJung, Gun Young-
dc.contributor.authorOhlberg, Douglas A.A.-
dc.contributor.authorLi, Xuema-
dc.contributor.authorStewart, Duncan R.-
dc.contributor.authorJeppesen, Jan O.-
dc.contributor.authorNielsen, Kent A.-
dc.contributor.authorStoddart, J. Fraser-
dc.contributor.authorWilliams, R. Stanley-
dc.date.accessioned2023-10-06T05:12:12Z-
dc.date.available2023-10-06T05:12:12Z-
dc.date.issued2003-
dc.identifier.citationNanotechnology, 2003, v. 14, n. 4, p. 462-468-
dc.identifier.issn0957-4484-
dc.identifier.urihttp://hdl.handle.net/10722/332527-
dc.description.abstractMolecular electronics offer an alternative pathway to construct nanoscale circuits in which the critical dimension is naturally associated with molecular sizes. We describe the fabrication and testing of nanoscale molecular-electronic circuits that comprise a molecular monolayer of [2]rotaxanes sandwiched between metal nanowires to form an 8 × 8 crossbar within a 1 μm2 area. The resistance at each cross point of the crossbar can be switched reversibly. By using each cross point as an active memory cell, crossbar circuits were operated as rewritable, nonvolatile memory with a density of 6.4 Obits cm-2. By setting the resistances at specific cross points, two 4 × 4 subarrays of the crossbar were configured to be a nanoscale demultiplexer and multiplexer that were used to read memory bits in a third subarray.-
dc.languageeng-
dc.relation.ispartofNanotechnology-
dc.titleNanoscale molecular-switch crossbar circuits-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/0957-4484/14/4/311-
dc.identifier.scopuseid_2-s2.0-0037392525-
dc.identifier.volume14-
dc.identifier.issue4-
dc.identifier.spage462-
dc.identifier.epage468-
dc.identifier.isiWOS:000183051000011-

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