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Article: Nanoscale molecular-switch devices fabricated by imprint lithography

TitleNanoscale molecular-switch devices fabricated by imprint lithography
Authors
Issue Date2003
Citation
Applied Physics Letters, 2003, v. 82, n. 10, p. 1610-1612 How to Cite?
AbstractThe fabrication of nanoscale molecular-switch devices by imprint lithography was presented. The imprinting mold was fabricated into thermally grown silicon oxide on a silicon substrate using electron-beam lithography and reactive-ion etching. Bistable current-voltage characteristics with high on-off ratios and reversible switching properties were observed.
Persistent Identifierhttp://hdl.handle.net/10722/332528
ISSN
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorChen, Yong-
dc.contributor.authorOhlberg, Douglas A.A.-
dc.contributor.authorLi, Xuema-
dc.contributor.authorStewart, Duncan R.-
dc.contributor.authorWilliams, R. Stanley-
dc.contributor.authorJeppesen, Jan O.-
dc.contributor.authorNielsen, Kent A.-
dc.contributor.authorStoddart, J. Fraser-
dc.contributor.authorOlynick, Deirdre L.-
dc.contributor.authorAndersen, Erik-
dc.date.accessioned2023-10-06T05:12:13Z-
dc.date.available2023-10-06T05:12:13Z-
dc.date.issued2003-
dc.identifier.citationApplied Physics Letters, 2003, v. 82, n. 10, p. 1610-1612-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/332528-
dc.description.abstractThe fabrication of nanoscale molecular-switch devices by imprint lithography was presented. The imprinting mold was fabricated into thermally grown silicon oxide on a silicon substrate using electron-beam lithography and reactive-ion etching. Bistable current-voltage characteristics with high on-off ratios and reversible switching properties were observed.-
dc.languageeng-
dc.relation.ispartofApplied Physics Letters-
dc.titleNanoscale molecular-switch devices fabricated by imprint lithography-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1063/1.1559439-
dc.identifier.scopuseid_2-s2.0-0037429907-
dc.identifier.volume82-
dc.identifier.issue10-
dc.identifier.spage1610-
dc.identifier.epage1612-
dc.identifier.isiWOS:000181358200039-

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