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- Publisher Website: 10.1109/MCD.2006.1657845
- Scopus: eid_2-s2.0-33746339217
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Article: Emerging memory devices
Title | Emerging memory devices |
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Authors | |
Issue Date | 2006 |
Citation | IEEE Circuits and Devices Magazine, 2006, v. 22, n. 3, p. 12-21 How to Cite? |
Abstract | To merge the unprecedented opportunity of nanotechnology with the industry's imminent scaling and power dissipation challenges, the Center on Functional Engineered Nano Architectonics (FENA) aims to engineer nontraditional memory alternatives based on nanomaterials and structures that may go beyond existing CMOS memory devices. FENA's new memory devices include molecular memory, spin-based memory, novel floating memory and phase change memory. Each device has its unique range of advantages and challenges. Although all are proved effective, none can compete with either DRAM or FLASH memory devices. |
Persistent Identifier | http://hdl.handle.net/10722/332678 |
ISSN | |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Galatsis, Kosmas | - |
dc.contributor.author | Wang, Kang | - |
dc.contributor.author | Botros, Youssry | - |
dc.contributor.author | Yang, Yang | - |
dc.contributor.author | Xie, Ya Hong | - |
dc.contributor.author | Stoddart, J. F. | - |
dc.contributor.author | Kaner, R. B. | - |
dc.contributor.author | Ozkan, Cengiz | - |
dc.contributor.author | Liu, Jianlin | - |
dc.contributor.author | Ozkan, Mihri | - |
dc.contributor.author | Zhou, Chongwu | - |
dc.contributor.author | Kim, Ki Wook | - |
dc.date.accessioned | 2023-10-06T05:13:26Z | - |
dc.date.available | 2023-10-06T05:13:26Z | - |
dc.date.issued | 2006 | - |
dc.identifier.citation | IEEE Circuits and Devices Magazine, 2006, v. 22, n. 3, p. 12-21 | - |
dc.identifier.issn | 8755-3996 | - |
dc.identifier.uri | http://hdl.handle.net/10722/332678 | - |
dc.description.abstract | To merge the unprecedented opportunity of nanotechnology with the industry's imminent scaling and power dissipation challenges, the Center on Functional Engineered Nano Architectonics (FENA) aims to engineer nontraditional memory alternatives based on nanomaterials and structures that may go beyond existing CMOS memory devices. FENA's new memory devices include molecular memory, spin-based memory, novel floating memory and phase change memory. Each device has its unique range of advantages and challenges. Although all are proved effective, none can compete with either DRAM or FLASH memory devices. | - |
dc.language | eng | - |
dc.relation.ispartof | IEEE Circuits and Devices Magazine | - |
dc.title | Emerging memory devices | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1109/MCD.2006.1657845 | - |
dc.identifier.scopus | eid_2-s2.0-33746339217 | - |
dc.identifier.volume | 22 | - |
dc.identifier.issue | 3 | - |
dc.identifier.spage | 12 | - |
dc.identifier.epage | 21 | - |
dc.identifier.isi | WOS:000239033600003 | - |