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Article: Switchable photoconductivity of quantum dot films using cross-linking ligands with light-sensitive structures
Title | Switchable photoconductivity of quantum dot films using cross-linking ligands with light-sensitive structures |
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Authors | |
Issue Date | 2011 |
Citation | Journal of Materials Chemistry, 2011, v. 21, n. 31, p. 11492-11497 How to Cite? |
Abstract | This paper describes the use of a diarylethylene (DAE) ligand, which adopts structures that are sensitive to the wavelength of light, to cross-link films of CdSe quantum dots (QDs) within electrical junctions with photoswitchable conductivity. These QD-DAE films are deposited on indium-tin-oxide/poly(3,4- ethylenedioxy-thiophene):poly(styrenesulfonate) (ITO/PEDOT:PSS) electrodes and have eutectic Ga-In top-contacts. The photocurrent density of the cross-linked QD films is enhanced by a factor of 6.5 (averaged over all applied voltages) when the DAE ligand is switched from its open, non-conductive form (by illumination with 500-650 nm light) to its closed, conductive form (by illumination with 300-400 nm light). This enhancement is accomplished by changing the inter-particle electronic coupling, not the inter-particle distance. Identical QD films cross-linked with dibenzenedithiol ligands have a photoconductivity that is insensitive to the wavelength of light. © 2011 The Royal Society of Chemistry. |
Persistent Identifier | http://hdl.handle.net/10722/332957 |
ISSN | 2013 Impact Factor: 6.626 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Lilly, G. Daniel | - |
dc.contributor.author | Whalley, Adam C. | - |
dc.contributor.author | Grunder, Sergio | - |
dc.contributor.author | Valente, Cory | - |
dc.contributor.author | Frederick, Matthew T. | - |
dc.contributor.author | Stoddart, J. Fraser | - |
dc.contributor.author | Weiss, Emily A. | - |
dc.date.accessioned | 2023-10-06T05:15:38Z | - |
dc.date.available | 2023-10-06T05:15:38Z | - |
dc.date.issued | 2011 | - |
dc.identifier.citation | Journal of Materials Chemistry, 2011, v. 21, n. 31, p. 11492-11497 | - |
dc.identifier.issn | 0959-9428 | - |
dc.identifier.uri | http://hdl.handle.net/10722/332957 | - |
dc.description.abstract | This paper describes the use of a diarylethylene (DAE) ligand, which adopts structures that are sensitive to the wavelength of light, to cross-link films of CdSe quantum dots (QDs) within electrical junctions with photoswitchable conductivity. These QD-DAE films are deposited on indium-tin-oxide/poly(3,4- ethylenedioxy-thiophene):poly(styrenesulfonate) (ITO/PEDOT:PSS) electrodes and have eutectic Ga-In top-contacts. The photocurrent density of the cross-linked QD films is enhanced by a factor of 6.5 (averaged over all applied voltages) when the DAE ligand is switched from its open, non-conductive form (by illumination with 500-650 nm light) to its closed, conductive form (by illumination with 300-400 nm light). This enhancement is accomplished by changing the inter-particle electronic coupling, not the inter-particle distance. Identical QD films cross-linked with dibenzenedithiol ligands have a photoconductivity that is insensitive to the wavelength of light. © 2011 The Royal Society of Chemistry. | - |
dc.language | eng | - |
dc.relation.ispartof | Journal of Materials Chemistry | - |
dc.title | Switchable photoconductivity of quantum dot films using cross-linking ligands with light-sensitive structures | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1039/c0jm04397d | - |
dc.identifier.scopus | eid_2-s2.0-79960895705 | - |
dc.identifier.volume | 21 | - |
dc.identifier.issue | 31 | - |
dc.identifier.spage | 11492 | - |
dc.identifier.epage | 11497 | - |
dc.identifier.eissn | 1364-5501 | - |
dc.identifier.isi | WOS:000293190200009 | - |