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Article: Integrated nanotube circuits: Controlled growth and ohmic contacting of single-walled carbon nanotubes

TitleIntegrated nanotube circuits: Controlled growth and ohmic contacting of single-walled carbon nanotubes
Authors
Issue Date1999
Citation
Applied Physics Letters, 1999, v. 75, n. 5, p. 627-629 How to Cite?
AbstractA chemical vapor deposition method was applied synthesize high quality single-walled nanotubes on catalytically patterned surfaces. Combination of synthesis and microfabrication methods obtained large numbers of integrated ohmically-contacted nanotube circuits. The contacts formed had very low resistance, in the order of the quantum resistance even at low temperatures.
Persistent Identifierhttp://hdl.handle.net/10722/334048
ISSN
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorSoh, Hyongsok T.-
dc.contributor.authorQuate, Calvin F.-
dc.contributor.authorMorpurgo, Alberto F.-
dc.contributor.authorMarcus, Charles M.-
dc.contributor.authorKong, Jing-
dc.contributor.authorHongjie, Dai-
dc.date.accessioned2023-10-20T06:45:15Z-
dc.date.available2023-10-20T06:45:15Z-
dc.date.issued1999-
dc.identifier.citationApplied Physics Letters, 1999, v. 75, n. 5, p. 627-629-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/334048-
dc.description.abstractA chemical vapor deposition method was applied synthesize high quality single-walled nanotubes on catalytically patterned surfaces. Combination of synthesis and microfabrication methods obtained large numbers of integrated ohmically-contacted nanotube circuits. The contacts formed had very low resistance, in the order of the quantum resistance even at low temperatures.-
dc.languageeng-
dc.relation.ispartofApplied Physics Letters-
dc.titleIntegrated nanotube circuits: Controlled growth and ohmic contacting of single-walled carbon nanotubes-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1063/1.124462-
dc.identifier.scopuseid_2-s2.0-0032607464-
dc.identifier.volume75-
dc.identifier.issue5-
dc.identifier.spage627-
dc.identifier.epage629-
dc.identifier.isiWOS:000081644100011-

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