File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Synthesis, integration, and electrical properties of individual single-walled carbon nanotubes

TitleSynthesis, integration, and electrical properties of individual single-walled carbon nanotubes
Authors
Kong, J.Zhou, C.Morpurgo, A.Soh, H. T.Quate, C. F.Marcus, C.Dai, H.
Issue Date1999
Citation
Applied Physics A: Materials Science and Processing, 1999, v. 69, n. 3, p. 305-308 How to Cite?
DOI: http://dx.doi.org/10.1007/s003390051005
AbstractHigh-quality single-walled carbon nanotubes (SWNTs) are synthesized by chemical vapor deposition (CVD) of methane on silicon-dioxide substrates at controlled locations using patterned catalytic islands. With the synthesized nanotube chips, microfabrication techniques are used to reliably contact individual SWNTs and obtain low contact resistance. The combined chemical synthesis and microfabrication approaches enable systematic characterization of electron transport properties of a large number of individual SWNTs. Results of electrical properties of representative semiconducting and metallic SWNTs are presented. The lowest two-terminal resistance for individual metallic SWNTs (≈5 μm long) is ≈16.5 kΩ measured at 4.2 K.
Persistent Identifierhttp://hdl.handle.net/10722/334050
ISSN
0947-8396
2023 Impact Factor: 2.5
2023 SCImago Journal Rankings: 0.446
ISI Accession Number ID
WOS:000082304200008

 

DC FieldValueLanguage
dc.contributor.authorKong, J.-
dc.contributor.authorZhou, C.-
dc.contributor.authorMorpurgo, A.-
dc.contributor.authorSoh, H. T.-
dc.contributor.authorQuate, C. F.-
dc.contributor.authorMarcus, C.-
dc.contributor.authorDai, H.-
dc.date.accessioned2023-10-20T06:45:16Z-
dc.date.available2023-10-20T06:45:16Z-
dc.date.issued1999-
dc.identifier.citationApplied Physics A: Materials Science and Processing, 1999, v. 69, n. 3, p. 305-308-
dc.identifier.issn0947-8396-
dc.identifier.urihttp://hdl.handle.net/10722/334050-
dc.description.abstractHigh-quality single-walled carbon nanotubes (SWNTs) are synthesized by chemical vapor deposition (CVD) of methane on silicon-dioxide substrates at controlled locations using patterned catalytic islands. With the synthesized nanotube chips, microfabrication techniques are used to reliably contact individual SWNTs and obtain low contact resistance. The combined chemical synthesis and microfabrication approaches enable systematic characterization of electron transport properties of a large number of individual SWNTs. Results of electrical properties of representative semiconducting and metallic SWNTs are presented. The lowest two-terminal resistance for individual metallic SWNTs (≈5 μm long) is ≈16.5 kΩ measured at 4.2 K.-
dc.languageeng-
dc.relation.ispartofApplied Physics A: Materials Science and Processing-
dc.titleSynthesis, integration, and electrical properties of individual single-walled carbon nanotubes-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1007/s003390051005-
dc.identifier.scopuseid_2-s2.0-0032648075-
dc.identifier.volume69-
dc.identifier.issue3-
dc.identifier.spage305-
dc.identifier.epage308-
dc.identifier.isiWOS:000082304200008-

Export via OAI-PMH Interface in XML Formats

OR

Export to Other Non-XML Formats