Experimental and theoretical results of room-temperature single-electron transistor formed by the atomic force microscope nano-oxidation process

Abstract

The single-walled carbon-nanotube atomic force microscope (SWNT-AFM) cantilever grown onto the Si AFM cantilever is introduced into the AFM nano-oxidation process. The ultranarrow TiOx line of 5 nm width is formed, and the SWNT AFM cantilever shows no degradation, even after long oxidation. It is found that even if the width of the tunnel junction is changed, the tunnel-junction capacitance hardly changed. The single-electron transistor (SET) fabricated by the SWNT AFM cantilever shows the Coulomb oscillation characteristic at room temperature with periods of 1 V and gate capacitance of 1.6×10-19 F.