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Article: Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics

TitleGermanium nanowire field-effect transistors with SiO<inf>2</inf> and high-κ HfO<inf>2</inf> gate dielectrics
Authors
Wang, DunweiWang, QianJavey, AliTu, RyanDai, HongjieKim, HyoungsubMcIntyre, Paul C.Krishnamohan, TejasSaraswat, Krishna C.
Issue Date2003
Citation
Applied Physics Letters, 2003, v. 83, n. 12, p. 2432-2434 How to Cite?
DOI: http://dx.doi.org/10.1063/1.1611644
AbstractThe synthesis of single-crystal germanium nanowires (GeNW) based field effect transistors (FET) was studied. In respect with it the GeNW FET with thin silicon dioxide gate insulators and high gate dielectrics were constructed. In the GeNW grown devices, the high hole mobility characteristics suggested the device to be of high quality with excellent electrical properties.
Persistent Identifierhttp://hdl.handle.net/10722/334085
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:000185333200044

 

DC FieldValueLanguage
dc.contributor.authorWang, Dunwei-
dc.contributor.authorWang, Qian-
dc.contributor.authorJavey, Ali-
dc.contributor.authorTu, Ryan-
dc.contributor.authorDai, Hongjie-
dc.contributor.authorKim, Hyoungsub-
dc.contributor.authorMcIntyre, Paul C.-
dc.contributor.authorKrishnamohan, Tejas-
dc.contributor.authorSaraswat, Krishna C.-
dc.date.accessioned2023-10-20T06:45:32Z-
dc.date.available2023-10-20T06:45:32Z-
dc.date.issued2003-
dc.identifier.citationApplied Physics Letters, 2003, v. 83, n. 12, p. 2432-2434-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/334085-
dc.description.abstractThe synthesis of single-crystal germanium nanowires (GeNW) based field effect transistors (FET) was studied. In respect with it the GeNW FET with thin silicon dioxide gate insulators and high gate dielectrics were constructed. In the GeNW grown devices, the high hole mobility characteristics suggested the device to be of high quality with excellent electrical properties.-
dc.languageeng-
dc.relation.ispartofApplied Physics Letters-
dc.titleGermanium nanowire field-effect transistors with SiO<inf>2</inf> and high-κ HfO<inf>2</inf> gate dielectrics-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1063/1.1611644-
dc.identifier.scopuseid_2-s2.0-0142055973-
dc.identifier.volume83-
dc.identifier.issue12-
dc.identifier.spage2432-
dc.identifier.epage2434-
dc.identifier.isiWOS:000185333200044-

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