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Article: Germanium nanowires: From synthesis, surface chemistry, and assembly to devices
Title | Germanium nanowires: From synthesis, surface chemistry, and assembly to devices |
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Authors | |
Issue Date | 2006 |
Citation | Applied Physics A: Materials Science and Processing, 2006, v. 85, n. 3, p. 217-225 How to Cite? |
Abstract | A low temperature synthesis of single crystalline Ge nanowires via chemical vapor deposition is enabled by balancing the feedstock and its diffusion in growth seeds. Understanding and optimizing the synthetic chemistry leads to deterministic nanowire growth at well-defined locations and bulk quantity production of homogeneous nanowires, both of which greatly facilitate the assembly toward parallel nanowire arrays. Surface chemistry studies reveal that p- and n-type Ge nanowires undergo different oxidation routes and the surface oxide induced states cause opposite band bending for nanowires with different doping. Furthermore, long chain alkanethiols form a dense and uniform protection layer on Ge nanowire surfaces and therefore afford excellent oxidation resistance. Finally, high performance field effect transistors are constructed on Ge nanowires with both thermally grown SiO2 and atomic layer deposited HfO2 as gate dielectrics. © Springer-Verlag 2006. |
Persistent Identifier | http://hdl.handle.net/10722/334131 |
ISSN | 2023 Impact Factor: 2.5 2023 SCImago Journal Rankings: 0.446 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Wang, D. | - |
dc.contributor.author | Dai, H. | - |
dc.date.accessioned | 2023-10-20T06:45:57Z | - |
dc.date.available | 2023-10-20T06:45:57Z | - |
dc.date.issued | 2006 | - |
dc.identifier.citation | Applied Physics A: Materials Science and Processing, 2006, v. 85, n. 3, p. 217-225 | - |
dc.identifier.issn | 0947-8396 | - |
dc.identifier.uri | http://hdl.handle.net/10722/334131 | - |
dc.description.abstract | A low temperature synthesis of single crystalline Ge nanowires via chemical vapor deposition is enabled by balancing the feedstock and its diffusion in growth seeds. Understanding and optimizing the synthetic chemistry leads to deterministic nanowire growth at well-defined locations and bulk quantity production of homogeneous nanowires, both of which greatly facilitate the assembly toward parallel nanowire arrays. Surface chemistry studies reveal that p- and n-type Ge nanowires undergo different oxidation routes and the surface oxide induced states cause opposite band bending for nanowires with different doping. Furthermore, long chain alkanethiols form a dense and uniform protection layer on Ge nanowire surfaces and therefore afford excellent oxidation resistance. Finally, high performance field effect transistors are constructed on Ge nanowires with both thermally grown SiO2 and atomic layer deposited HfO2 as gate dielectrics. © Springer-Verlag 2006. | - |
dc.language | eng | - |
dc.relation.ispartof | Applied Physics A: Materials Science and Processing | - |
dc.title | Germanium nanowires: From synthesis, surface chemistry, and assembly to devices | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1007/s00339-006-3704-z | - |
dc.identifier.scopus | eid_2-s2.0-33750178280 | - |
dc.identifier.volume | 85 | - |
dc.identifier.issue | 3 | - |
dc.identifier.spage | 217 | - |
dc.identifier.epage | 225 | - |
dc.identifier.eissn | 1432-0630 | - |
dc.identifier.isi | WOS:000241354900002 | - |