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- Publisher Website: 10.1109/IEDM.2006.346804
- Scopus: eid_2-s2.0-46049098613
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Conference Paper: Carbon nanotubes: From growth, placement and assembly control to 60mV/decade and sub-60 mV/decade tunnel transistors
| Title | Carbon nanotubes: From growth, placement and assembly control to 60mV/decade and sub-60 mV/decade tunnel transistors |
|---|---|
| Authors | |
| Issue Date | 2006 |
| Citation | Technical Digest - International Electron Devices Meeting, IEDM, 2006, article no. 4154223 How to Cite? |
| Abstract | This paper presents recent progress on placement and orientation control of single-walled carbon nanotubes (SWNTs) by both CVD and PECVD growth in electric fields and on single crystal quartz substrates, and post-growth Langmuir Bloddget assembly of close-packed SWNTs. We also present fabrication of nanotube field effect-transistors (FETs) including MOSFET like devices with 60mV/decade switching and ambipolar P-I-N band-to-band tunnel (BTBT) transistors with subthreshold swings down to 25mV/decade. |
| Persistent Identifier | http://hdl.handle.net/10722/334175 |
| ISSN | 2023 SCImago Journal Rankings: 1.047 |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Zhang, Guangyu | - |
| dc.contributor.author | Wang, Xinran | - |
| dc.contributor.author | Li, Xiaolin | - |
| dc.contributor.author | Lu, Yuerui | - |
| dc.contributor.author | Javey, Ali | - |
| dc.contributor.author | Dai, Hongjie | - |
| dc.date.accessioned | 2023-10-20T06:46:16Z | - |
| dc.date.available | 2023-10-20T06:46:16Z | - |
| dc.date.issued | 2006 | - |
| dc.identifier.citation | Technical Digest - International Electron Devices Meeting, IEDM, 2006, article no. 4154223 | - |
| dc.identifier.issn | 0163-1918 | - |
| dc.identifier.uri | http://hdl.handle.net/10722/334175 | - |
| dc.description.abstract | This paper presents recent progress on placement and orientation control of single-walled carbon nanotubes (SWNTs) by both CVD and PECVD growth in electric fields and on single crystal quartz substrates, and post-growth Langmuir Bloddget assembly of close-packed SWNTs. We also present fabrication of nanotube field effect-transistors (FETs) including MOSFET like devices with 60mV/decade switching and ambipolar P-I-N band-to-band tunnel (BTBT) transistors with subthreshold swings down to 25mV/decade. | - |
| dc.language | eng | - |
| dc.relation.ispartof | Technical Digest - International Electron Devices Meeting, IEDM | - |
| dc.title | Carbon nanotubes: From growth, placement and assembly control to 60mV/decade and sub-60 mV/decade tunnel transistors | - |
| dc.type | Conference_Paper | - |
| dc.description.nature | link_to_subscribed_fulltext | - |
| dc.identifier.doi | 10.1109/IEDM.2006.346804 | - |
| dc.identifier.scopus | eid_2-s2.0-46049098613 | - |
| dc.identifier.spage | article no. 4154223 | - |
| dc.identifier.epage | article no. 4154223 | - |