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Conference Paper: Multilayer graphene nanoribbon for 3D stacking of the transistor channel

TitleMultilayer graphene nanoribbon for 3D stacking of the transistor channel
Authors
Issue Date2009
Citation
Technical Digest - International Electron Devices Meeting, IEDM, 2009, article no. 5424275 How to Cite?
AbstractThe graphene nanoribbon (GNR) transistor suffers from the problem of a low on-current due to the nanometer-wide channel. In this work, a self-consistent atomistic simulation is performed to explore the possibility of boosting the ballistic on-current of the GNRFET by using the experimentally accessible multilayer GNR, which provides a natural structure for 3D stacking of the transistor channel. The effects of the number of graphene layers and interlayer coupling strength are studied under different gating technologies. Only limited improvement of the on-current can be achieved with a typical bottom gate because of the small gate insulator capacitance. With a high-κ gate, the improvement of the multilayer channel, however, is significant. Reducing the interlayer coupling can further increase the on-current by a factor of 2 for a 5-layer GNR channel. © 2009 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/334213
ISSN
2023 SCImago Journal Rankings: 1.047

 

DC FieldValueLanguage
dc.contributor.authorOuyang, Yijian-
dc.contributor.authorDai, Hongjie-
dc.contributor.authorGuo, Jing-
dc.date.accessioned2023-10-20T06:46:32Z-
dc.date.available2023-10-20T06:46:32Z-
dc.date.issued2009-
dc.identifier.citationTechnical Digest - International Electron Devices Meeting, IEDM, 2009, article no. 5424275-
dc.identifier.issn0163-1918-
dc.identifier.urihttp://hdl.handle.net/10722/334213-
dc.description.abstractThe graphene nanoribbon (GNR) transistor suffers from the problem of a low on-current due to the nanometer-wide channel. In this work, a self-consistent atomistic simulation is performed to explore the possibility of boosting the ballistic on-current of the GNRFET by using the experimentally accessible multilayer GNR, which provides a natural structure for 3D stacking of the transistor channel. The effects of the number of graphene layers and interlayer coupling strength are studied under different gating technologies. Only limited improvement of the on-current can be achieved with a typical bottom gate because of the small gate insulator capacitance. With a high-κ gate, the improvement of the multilayer channel, however, is significant. Reducing the interlayer coupling can further increase the on-current by a factor of 2 for a 5-layer GNR channel. © 2009 IEEE.-
dc.languageeng-
dc.relation.ispartofTechnical Digest - International Electron Devices Meeting, IEDM-
dc.titleMultilayer graphene nanoribbon for 3D stacking of the transistor channel-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/IEDM.2009.5424275-
dc.identifier.scopuseid_2-s2.0-77952407421-
dc.identifier.spagearticle no. 5424275-
dc.identifier.epagearticle no. 5424275-

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