File Download
There are no files associated with this item.
Links for fulltext
(May Require Subscription)
- Publisher Website: 10.1063/1.1431402
- Scopus: eid_2-s2.0-79956003592
- WOS: WOS:000173029000025
- Find via
Supplementary
- Citations:
- Appears in Collections:
Article: Chemical profiling of single nanotubes: Intramolecular p-n-p junctions and on-tube single-electron transistors
Title | Chemical profiling of single nanotubes: Intramolecular p-n-p junctions and on-tube single-electron transistors |
---|---|
Authors | |
Issue Date | 2002 |
Citation | Applied Physics Letters, 2002, v. 80, n. 1, p. 73-75 How to Cite? |
Abstract | Electrical transport properties of intramolecular p-n-p junctions formed on individual semiconducting carbon nanotubes are reported. Chemical dopant "profiling" along the length of a nanotube divides the nanotube into two p-doped sections and a central n-doped section. The double p-n junctions formed on the nanotube dictate the electrical characteristics of the system. Well-defined and highly reproducible single-electron transistors with much smaller size than the geometrical length of the nanotube are obtained. © 2002 American Institute of Physics. |
Persistent Identifier | http://hdl.handle.net/10722/334241 |
ISSN | 2023 Impact Factor: 3.5 2023 SCImago Journal Rankings: 0.976 |
ISI Accession Number ID |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kong, Jing | - |
dc.contributor.author | Cao, Jien | - |
dc.contributor.author | Dai, Hongjie | - |
dc.contributor.author | Anderson, Erik | - |
dc.date.accessioned | 2023-10-20T06:46:44Z | - |
dc.date.available | 2023-10-20T06:46:44Z | - |
dc.date.issued | 2002 | - |
dc.identifier.citation | Applied Physics Letters, 2002, v. 80, n. 1, p. 73-75 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10722/334241 | - |
dc.description.abstract | Electrical transport properties of intramolecular p-n-p junctions formed on individual semiconducting carbon nanotubes are reported. Chemical dopant "profiling" along the length of a nanotube divides the nanotube into two p-doped sections and a central n-doped section. The double p-n junctions formed on the nanotube dictate the electrical characteristics of the system. Well-defined and highly reproducible single-electron transistors with much smaller size than the geometrical length of the nanotube are obtained. © 2002 American Institute of Physics. | - |
dc.language | eng | - |
dc.relation.ispartof | Applied Physics Letters | - |
dc.title | Chemical profiling of single nanotubes: Intramolecular p-n-p junctions and on-tube single-electron transistors | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1063/1.1431402 | - |
dc.identifier.scopus | eid_2-s2.0-79956003592 | - |
dc.identifier.volume | 80 | - |
dc.identifier.issue | 1 | - |
dc.identifier.spage | 73 | - |
dc.identifier.epage | 75 | - |
dc.identifier.isi | WOS:000173029000025 | - |