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Article: Improved Resistance Switching Stability in Fe-Doped ZnO Thin Films Through Pulsed Magnetic Field Annealing

TitleImproved Resistance Switching Stability in Fe-Doped ZnO Thin Films Through Pulsed Magnetic Field Annealing
Authors
Xu, HongtaoWu, ChangjinXiahou, ZhaoJung, RanjuLi, YingLiu, Chunli
KeywordsFe doping
Magnetic annealing
RRAM
ZnO
Issue Date2017
Citation
Nanoscale Research Letters, 2017, v. 12, n. 1, article no. 176 How to Cite?
DOI: http://dx.doi.org/10.1186/s11671-017-1949-4
AbstractFive percent of Fe-doped ZnO (ZnO:Fe) thin films were deposited on Pt/TiO2/SiO2/Si substrates by a spin-coating method. The films were annealed without (ZnO:Fe-0T) and with a pulsed magnetic field of 4 T (ZnO:Fe-4TP) to investigate the magnetic annealing effect on the resistance switching (RS) behavior of the Pt/ZnO:Fe/Pt structures. Compared with the ZnO:Fe-0T film, the ZnO:Fe-4TP film showed improved RS performance regarding the stability of the set voltage and the resistance of the high resistance state. Transmission electron microscopy and X-ray photoelectron spectroscopy analyses revealed that the ZnO:Fe-4TP film contains more uniform grains and a higher density of oxygen vacancies, which promote the easier formation of conducting filaments along similar paths and the stability of switching parameters. These results suggest that external magnetic fields can be used to prepare magnetic oxide thin films with improved resistance switching performance for memory device applications.
Persistent Identifierhttp://hdl.handle.net/10722/334469
ISSN
1931-7573
2023 Impact Factor: 5.5
2023 SCImago Journal Rankings: 1.016
ISI Accession Number ID
WOS:000397600200007

 

DC FieldValueLanguage
dc.contributor.authorXu, Hongtao-
dc.contributor.authorWu, Changjin-
dc.contributor.authorXiahou, Zhao-
dc.contributor.authorJung, Ranju-
dc.contributor.authorLi, Ying-
dc.contributor.authorLiu, Chunli-
dc.date.accessioned2023-10-20T06:48:21Z-
dc.date.available2023-10-20T06:48:21Z-
dc.date.issued2017-
dc.identifier.citationNanoscale Research Letters, 2017, v. 12, n. 1, article no. 176-
dc.identifier.issn1931-7573-
dc.identifier.urihttp://hdl.handle.net/10722/334469-
dc.description.abstractFive percent of Fe-doped ZnO (ZnO:Fe) thin films were deposited on Pt/TiO2/SiO2/Si substrates by a spin-coating method. The films were annealed without (ZnO:Fe-0T) and with a pulsed magnetic field of 4 T (ZnO:Fe-4TP) to investigate the magnetic annealing effect on the resistance switching (RS) behavior of the Pt/ZnO:Fe/Pt structures. Compared with the ZnO:Fe-0T film, the ZnO:Fe-4TP film showed improved RS performance regarding the stability of the set voltage and the resistance of the high resistance state. Transmission electron microscopy and X-ray photoelectron spectroscopy analyses revealed that the ZnO:Fe-4TP film contains more uniform grains and a higher density of oxygen vacancies, which promote the easier formation of conducting filaments along similar paths and the stability of switching parameters. These results suggest that external magnetic fields can be used to prepare magnetic oxide thin films with improved resistance switching performance for memory device applications.-
dc.languageeng-
dc.relation.ispartofNanoscale Research Letters-
dc.subjectFe doping-
dc.subjectMagnetic annealing-
dc.subjectRRAM-
dc.subjectZnO-
dc.titleImproved Resistance Switching Stability in Fe-Doped ZnO Thin Films Through Pulsed Magnetic Field Annealing-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1186/s11671-017-1949-4-
dc.identifier.scopuseid_2-s2.0-85015089637-
dc.identifier.volume12-
dc.identifier.issue1-
dc.identifier.spagearticle no. 176-
dc.identifier.epagearticle no. 176-
dc.identifier.eissn1556-276X-
dc.identifier.isiWOS:000397600200007-

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