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- Publisher Website: 10.1002/adma.201401108
- Scopus: eid_2-s2.0-85027925588
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Article: Top-down patterning and self-assembly for regular arrays of semiconducting single-walled carbon nanotubes
Title | Top-down patterning and self-assembly for regular arrays of semiconducting single-walled carbon nanotubes |
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Authors | |
Keywords | carbon nanotubes field-effect transistors nanostructures nanotechnology self-assembly |
Issue Date | 2014 |
Citation | Advanced Materials, 2014, v. 26, n. 35, p. 6151-6156 How to Cite? |
Abstract | Highly pure semiconducting single-walled carbon nanotubes (SWNTs), sorted by density-gradient ultracentrifugation, undergo self-assembly using depletion attraction forces into rafts along lithographically defined patterns of narrow pitch (100 or 200 nm). The arrays demonstrate high pattern fidelity and channel filling, along with large-scale homogeneity. Field-effect transistors made from these arrays exhibit high performance at on/off ratios > 1000. |
Persistent Identifier | http://hdl.handle.net/10722/334491 |
ISSN | 2023 Impact Factor: 27.4 2023 SCImago Journal Rankings: 9.191 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Wu, Justin | - |
dc.contributor.author | Antaris, Alexander | - |
dc.contributor.author | Gong, Ming | - |
dc.contributor.author | Dai, Hongjie | - |
dc.date.accessioned | 2023-10-20T06:48:31Z | - |
dc.date.available | 2023-10-20T06:48:31Z | - |
dc.date.issued | 2014 | - |
dc.identifier.citation | Advanced Materials, 2014, v. 26, n. 35, p. 6151-6156 | - |
dc.identifier.issn | 0935-9648 | - |
dc.identifier.uri | http://hdl.handle.net/10722/334491 | - |
dc.description.abstract | Highly pure semiconducting single-walled carbon nanotubes (SWNTs), sorted by density-gradient ultracentrifugation, undergo self-assembly using depletion attraction forces into rafts along lithographically defined patterns of narrow pitch (100 or 200 nm). The arrays demonstrate high pattern fidelity and channel filling, along with large-scale homogeneity. Field-effect transistors made from these arrays exhibit high performance at on/off ratios > 1000. | - |
dc.language | eng | - |
dc.relation.ispartof | Advanced Materials | - |
dc.subject | carbon nanotubes | - |
dc.subject | field-effect transistors | - |
dc.subject | nanostructures | - |
dc.subject | nanotechnology | - |
dc.subject | self-assembly | - |
dc.title | Top-down patterning and self-assembly for regular arrays of semiconducting single-walled carbon nanotubes | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1002/adma.201401108 | - |
dc.identifier.scopus | eid_2-s2.0-85027925588 | - |
dc.identifier.volume | 26 | - |
dc.identifier.issue | 35 | - |
dc.identifier.spage | 6151 | - |
dc.identifier.epage | 6156 | - |
dc.identifier.eissn | 1521-4095 | - |
dc.identifier.isi | WOS:000342148600015 | - |