File Download
There are no files associated with this item.
Links for fulltext
(May Require Subscription)
- Publisher Website: 10.1021/ja8023059
- Scopus: eid_2-s2.0-46049105319
- WOS: WOS:000257152800022
- Find via
Supplementary
- Citations:
- Appears in Collections:
Article: Atomic layer deposition of metal oxides on pristine and functionalized graphene
Title | Atomic layer deposition of metal oxides on pristine and functionalized graphene |
---|---|
Authors | |
Issue Date | 2008 |
Citation | Journal of the American Chemical Society, 2008, v. 130, n. 26, p. 8152-8153 How to Cite? |
Abstract | We investigate atomic layer deposition (ALD) of metal oxide on pristine and functionalized graphene. On pristine graphene, ALD coating can only actively grow on edges and defect sites, where dangling bonds or surface groups react with ALD precursors. This affords a simple method to decorate and probe single defect sites in graphene planes. We used perylene tetracarboxylic acid (PTCA) to functionalize the graphene surface and selectively introduced densely packed surface groups on graphene. Uniform ultrathin ALD coating on PTCA graphene was achieved over a large area. The functionalization method could be used to integrate ultrathin high-κ dielectrics in future graphene electronics. Copyright © 2008 American Chemical Society. |
Persistent Identifier | http://hdl.handle.net/10722/334933 |
ISSN | 2023 Impact Factor: 14.4 2023 SCImago Journal Rankings: 5.489 |
ISI Accession Number ID |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Wang, Xinran | - |
dc.contributor.author | Tabakman, Scott M. | - |
dc.contributor.author | Dai, Hongjie | - |
dc.date.accessioned | 2023-10-20T06:51:49Z | - |
dc.date.available | 2023-10-20T06:51:49Z | - |
dc.date.issued | 2008 | - |
dc.identifier.citation | Journal of the American Chemical Society, 2008, v. 130, n. 26, p. 8152-8153 | - |
dc.identifier.issn | 0002-7863 | - |
dc.identifier.uri | http://hdl.handle.net/10722/334933 | - |
dc.description.abstract | We investigate atomic layer deposition (ALD) of metal oxide on pristine and functionalized graphene. On pristine graphene, ALD coating can only actively grow on edges and defect sites, where dangling bonds or surface groups react with ALD precursors. This affords a simple method to decorate and probe single defect sites in graphene planes. We used perylene tetracarboxylic acid (PTCA) to functionalize the graphene surface and selectively introduced densely packed surface groups on graphene. Uniform ultrathin ALD coating on PTCA graphene was achieved over a large area. The functionalization method could be used to integrate ultrathin high-κ dielectrics in future graphene electronics. Copyright © 2008 American Chemical Society. | - |
dc.language | eng | - |
dc.relation.ispartof | Journal of the American Chemical Society | - |
dc.title | Atomic layer deposition of metal oxides on pristine and functionalized graphene | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1021/ja8023059 | - |
dc.identifier.scopus | eid_2-s2.0-46049105319 | - |
dc.identifier.volume | 130 | - |
dc.identifier.issue | 26 | - |
dc.identifier.spage | 8152 | - |
dc.identifier.epage | 8153 | - |
dc.identifier.isi | WOS:000257152800022 | - |