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Article: Colossal angular magnetoresistance in the antiferromagnetic semiconductor EuTe2

TitleColossal angular magnetoresistance in the antiferromagnetic semiconductor EuTe2
Authors
Issue Date2021
Citation
Physical Review B, 2021, v. 104, n. 21, article no. 214419 How to Cite?
AbstractWith a surge of interest in antiferromagnetic (AFM) spintronics, the manipulation and detection of different AFM states has become a topic of concern. In particular, a large magnetoresistive response is of critical importance for facilitating the readout of AFM states. Here, we report the observation of colossal angular magnetoresistance (AMR) in a layered AFM rare-earth dichalcogenide, EuTe2. The AMR reaches ∼40 000% at 2 K and 22 kOe, which is approximately four orders of magnitude larger than in AFM metals and alloys. Combined magnetization, resistivity, and theoretical analysis reveal strong coupling of the electronic state (metal vs insulator) to the vector spins, which mainly arises from the space-time inversion symmetry-broken correlated band reconstruction. Consequently, the anisotropic magnetization response to the vector magnetic field induces metal-insulator transition (MIT) and a large anisotropic magnetotransport that explains the experimental findings very well. These results suggest an avenue for exploring the spin configuration dependent transport properties for unique AFM spintronic devices.
Persistent Identifierhttp://hdl.handle.net/10722/335038
ISSN
2023 Impact Factor: 3.2
2023 SCImago Journal Rankings: 1.345
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorYang, Huali-
dc.contributor.authorLiu, Qing-
dc.contributor.authorLiao, Zhaoliang-
dc.contributor.authorSi, Liang-
dc.contributor.authorJiang, Peiheng-
dc.contributor.authorLiu, Xiaolei-
dc.contributor.authorGuo, Yanfeng-
dc.contributor.authorYin, Junjie-
dc.contributor.authorWang, Meng-
dc.contributor.authorSheng, Zhigao-
dc.contributor.authorZhao, Yuxin-
dc.contributor.authorWang, Zhiming-
dc.contributor.authorZhong, Zhicheng-
dc.contributor.authorLi, Run Wei-
dc.date.accessioned2023-10-24T08:28:38Z-
dc.date.available2023-10-24T08:28:38Z-
dc.date.issued2021-
dc.identifier.citationPhysical Review B, 2021, v. 104, n. 21, article no. 214419-
dc.identifier.issn2469-9950-
dc.identifier.urihttp://hdl.handle.net/10722/335038-
dc.description.abstractWith a surge of interest in antiferromagnetic (AFM) spintronics, the manipulation and detection of different AFM states has become a topic of concern. In particular, a large magnetoresistive response is of critical importance for facilitating the readout of AFM states. Here, we report the observation of colossal angular magnetoresistance (AMR) in a layered AFM rare-earth dichalcogenide, EuTe2. The AMR reaches ∼40 000% at 2 K and 22 kOe, which is approximately four orders of magnitude larger than in AFM metals and alloys. Combined magnetization, resistivity, and theoretical analysis reveal strong coupling of the electronic state (metal vs insulator) to the vector spins, which mainly arises from the space-time inversion symmetry-broken correlated band reconstruction. Consequently, the anisotropic magnetization response to the vector magnetic field induces metal-insulator transition (MIT) and a large anisotropic magnetotransport that explains the experimental findings very well. These results suggest an avenue for exploring the spin configuration dependent transport properties for unique AFM spintronic devices.-
dc.languageeng-
dc.relation.ispartofPhysical Review B-
dc.titleColossal angular magnetoresistance in the antiferromagnetic semiconductor EuTe2-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1103/PhysRevB.104.214419-
dc.identifier.scopuseid_2-s2.0-85122039471-
dc.identifier.volume104-
dc.identifier.issue21-
dc.identifier.spagearticle no. 214419-
dc.identifier.epagearticle no. 214419-
dc.identifier.eissn2469-9969-
dc.identifier.isiWOS:000753770800003-

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