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Article: Tuning the atomic and electronic structures of mirror twin boundaries in molecular beam epitaxy grown MoSe2 monolayers via rhenium doping

TitleTuning the atomic and electronic structures of mirror twin boundaries in molecular beam epitaxy grown MoSe2 monolayers via rhenium doping
Authors
Keywords2D materials
doping
mirror twin grain boundary
transition metal dichalcogenide
Issue Date1-Apr-2024
PublisherIOP Publishing
Citation
2D Materials, 2024, v. 11, n. 2, p. 1-12 How to Cite?
AbstractInterplay between defects like mirror twin boundaries (MTBs) and dopants may provide additional opportunities for furthering the research on two-dimensional monolayer (ML) transition metal dichalcogenides. In this work, we successfully dope rhenium (Re) into molecular beam epitaxy grown ML MoSe2 and confirm the formation of a new type of MTBs, named 4|4E-M (M represents metal, Mo/Re) according to the configuration. Data from statistic atomic resolution scanning transmission electron microscopy also reveals a preferable MTB enrichment of Re dopants, rather than intra-domain. In conjunction with density functional theory calculation results, we propose the possible routes for Re doping induced formation of 4|4E-M MTBs. Electronic structures of Re doped MTBs in ML MoSe2 are also predicted theoretically and then preliminarily tested by scanning tunneling microscopy and spectroscopy.
Persistent Identifierhttp://hdl.handle.net/10722/336981
ISSN
2023 Impact Factor: 4.5
2023 SCImago Journal Rankings: 1.483
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorYu, Zhoubin-
dc.contributor.authorXia, Yipu-
dc.contributor.authorKomsa, Hannu-Pekka-
dc.contributor.authorZhang, Junqiu-
dc.contributor.authorXie, Maohai-
dc.contributor.authorJin, Chuanhong-
dc.date.accessioned2024-03-07T05:57:09Z-
dc.date.available2024-03-07T05:57:09Z-
dc.date.issued2024-04-01-
dc.identifier.citation2D Materials, 2024, v. 11, n. 2, p. 1-12-
dc.identifier.issn2053-1583-
dc.identifier.urihttp://hdl.handle.net/10722/336981-
dc.description.abstractInterplay between defects like mirror twin boundaries (MTBs) and dopants may provide additional opportunities for furthering the research on two-dimensional monolayer (ML) transition metal dichalcogenides. In this work, we successfully dope rhenium (Re) into molecular beam epitaxy grown ML MoSe2 and confirm the formation of a new type of MTBs, named 4|4E-M (M represents metal, Mo/Re) according to the configuration. Data from statistic atomic resolution scanning transmission electron microscopy also reveals a preferable MTB enrichment of Re dopants, rather than intra-domain. In conjunction with density functional theory calculation results, we propose the possible routes for Re doping induced formation of 4|4E-M MTBs. Electronic structures of Re doped MTBs in ML MoSe2 are also predicted theoretically and then preliminarily tested by scanning tunneling microscopy and spectroscopy.-
dc.languageeng-
dc.publisherIOP Publishing-
dc.relation.ispartof2D Materials-
dc.subject2D materials-
dc.subjectdoping-
dc.subjectmirror twin grain boundary-
dc.subjecttransition metal dichalcogenide-
dc.titleTuning the atomic and electronic structures of mirror twin boundaries in molecular beam epitaxy grown MoSe2 monolayers via rhenium doping-
dc.typeArticle-
dc.description.naturepreprint-
dc.identifier.doi10.1088/2053-1583/ad1d0c-
dc.identifier.scopuseid_2-s2.0-85183621111-
dc.identifier.volume11-
dc.identifier.issue2-
dc.identifier.spage1-
dc.identifier.epage12-
dc.identifier.eissn2053-1583-
dc.identifier.isiWOS:001154857900001-
dc.publisher.placeBRISTOL-
dc.identifier.issnl2053-1583-

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