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- Publisher Website: 10.1038/s41563-023-01637-7
- Scopus: eid_2-s2.0-85167508265
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Article: Electrostatic moiré potential from twisted hexagonal boron nitride layers
Title | Electrostatic moiré potential from twisted hexagonal boron nitride layers |
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Authors | |
Issue Date | 10-Aug-2023 |
Publisher | Nature Research |
Citation | Nature Materials, 2023, v. 23, p. 65-70 How to Cite? |
Abstract | Moiré superlattices host a rich variety of correlated electronic phases. However, the moiré potential is fixed by interlayer coupling, and it is dependent on the nature of carriers and valleys. In contrast, it has been predicted that twisted hexagonal boron nitride (hBN) layers can impose a periodic electrostatic potential capable of engineering the properties of adjacent functional layers. Here, we show that this potential is described by a theory of electric polarization originating from the interfacial charge redistribution, validated by its dependence on supercell sizes and distance from the twisted interfaces. This enables controllability of the potential depth and profile by controlling the twist angles between the two interfaces. Employing this approach, we further demonstrate how the electrostatic potential from a twisted hBN substrate impedes exciton diffusion in semiconductor monolayers, suggesting opportunities for engineering the properties of adjacent functional layers using the surface potential of a twisted hBN substrate. |
Persistent Identifier | http://hdl.handle.net/10722/338627 |
ISSN | 2023 Impact Factor: 37.2 2023 SCImago Journal Rankings: 14.231 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Kim, DS | - |
dc.contributor.author | Dominguez, RC | - |
dc.contributor.author | Mayorga-Luna, R | - |
dc.contributor.author | Ye, D | - |
dc.contributor.author | Embley, J | - |
dc.contributor.author | Tan, T | - |
dc.contributor.author | Ni, Y | - |
dc.contributor.author | Liu, Z | - |
dc.contributor.author | Ford, M | - |
dc.contributor.author | Gao, FY | - |
dc.contributor.author | Arash, S | - |
dc.contributor.author | Watanabe, K | - |
dc.contributor.author | Taniguchi, T | - |
dc.contributor.author | Kim, S | - |
dc.contributor.author | Shih, CK | - |
dc.contributor.author | Lai, K | - |
dc.contributor.author | Yao, W | - |
dc.contributor.author | Yang, L | - |
dc.contributor.author | Li, X | - |
dc.contributor.author | Miyahara, Y | - |
dc.date.accessioned | 2024-03-11T10:30:18Z | - |
dc.date.available | 2024-03-11T10:30:18Z | - |
dc.date.issued | 2023-08-10 | - |
dc.identifier.citation | Nature Materials, 2023, v. 23, p. 65-70 | - |
dc.identifier.issn | 1476-1122 | - |
dc.identifier.uri | http://hdl.handle.net/10722/338627 | - |
dc.description.abstract | Moiré superlattices host a rich variety of correlated electronic phases. However, the moiré potential is fixed by interlayer coupling, and it is dependent on the nature of carriers and valleys. In contrast, it has been predicted that twisted hexagonal boron nitride (hBN) layers can impose a periodic electrostatic potential capable of engineering the properties of adjacent functional layers. Here, we show that this potential is described by a theory of electric polarization originating from the interfacial charge redistribution, validated by its dependence on supercell sizes and distance from the twisted interfaces. This enables controllability of the potential depth and profile by controlling the twist angles between the two interfaces. Employing this approach, we further demonstrate how the electrostatic potential from a twisted hBN substrate impedes exciton diffusion in semiconductor monolayers, suggesting opportunities for engineering the properties of adjacent functional layers using the surface potential of a twisted hBN substrate. | - |
dc.language | eng | - |
dc.publisher | Nature Research | - |
dc.relation.ispartof | Nature Materials | - |
dc.rights | This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License. | - |
dc.title | Electrostatic moiré potential from twisted hexagonal boron nitride layers | - |
dc.type | Article | - |
dc.identifier.doi | 10.1038/s41563-023-01637-7 | - |
dc.identifier.scopus | eid_2-s2.0-85167508265 | - |
dc.identifier.volume | 23 | - |
dc.identifier.spage | 65 | - |
dc.identifier.epage | 70 | - |
dc.identifier.eissn | 1476-4660 | - |
dc.identifier.isi | WOS:001045735800001 | - |
dc.identifier.issnl | 1476-1122 | - |