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Article: Non-volatile optoelectronic memory based on a photosensitive dielectric

TitleNon-volatile optoelectronic memory based on a photosensitive dielectric
Authors
Issue Date5-Sep-2023
PublisherNature Research
Citation
Nature Communications, 2023, v. 14, n. 1, p. 1-8 How to Cite?
Abstract

Recently, the optoelectronicmemory is capturing growing attention due to its integrated function of sense and memory as well as multilevel storage ability. Although tens of states have been reported in literature, there are still three obvious deficiencies in most of the optoelectronic memories: large programming voltage (> 20 V), high optical power density (> 1mWcm(-2)), and poor compatibility originating from the over-reliance on channel materials. Here, we firstly propose an optoelectronic memory based on a new photosensitive dielectric (PSD) architecture. Data writing and erasing are realized by using an optical pulse to switch on the PSD. The unique design enables the memory to work with a programming voltage and optical power density as low as 4 V and 160 mu Wcm(-2), respectively. Meanwhile, this device may be extended to different kinds of transistors for specific applications. Our discovery offers a brandnew direction for non-volatile optoelectronic memories with low energy consumption.


Persistent Identifierhttp://hdl.handle.net/10722/338943
ISSN
2023 Impact Factor: 14.7
2023 SCImago Journal Rankings: 4.887
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorZhu, R-
dc.contributor.authorLiang, HL-
dc.contributor.authorLiu, SF-
dc.contributor.authorYuan, Y-
dc.contributor.authorWang, XQ-
dc.contributor.authorLing, FCC-
dc.contributor.authorKuznetsov, A-
dc.contributor.authorZhang, GY-
dc.contributor.authorMei, ZX-
dc.date.accessioned2024-03-11T10:32:42Z-
dc.date.available2024-03-11T10:32:42Z-
dc.date.issued2023-09-05-
dc.identifier.citationNature Communications, 2023, v. 14, n. 1, p. 1-8-
dc.identifier.issn2041-1723-
dc.identifier.urihttp://hdl.handle.net/10722/338943-
dc.description.abstract<p>Recently, the optoelectronicmemory is capturing growing attention due to its integrated function of sense and memory as well as multilevel storage ability. Although tens of states have been reported in literature, there are still three obvious deficiencies in most of the optoelectronic memories: large programming voltage (> 20 V), high optical power density (> 1mWcm(-2)), and poor compatibility originating from the over-reliance on channel materials. Here, we firstly propose an optoelectronic memory based on a new photosensitive dielectric (PSD) architecture. Data writing and erasing are realized by using an optical pulse to switch on the PSD. The unique design enables the memory to work with a programming voltage and optical power density as low as 4 V and 160 mu Wcm(-2), respectively. Meanwhile, this device may be extended to different kinds of transistors for specific applications. Our discovery offers a brandnew direction for non-volatile optoelectronic memories with low energy consumption.</p>-
dc.languageeng-
dc.publisherNature Research-
dc.relation.ispartofNature Communications-
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.titleNon-volatile optoelectronic memory based on a photosensitive dielectric-
dc.typeArticle-
dc.identifier.doi10.1038/s41467-023-40938-y-
dc.identifier.pmid37669944-
dc.identifier.scopuseid_2-s2.0-85169701643-
dc.identifier.volume14-
dc.identifier.issue1-
dc.identifier.spage1-
dc.identifier.epage8-
dc.identifier.eissn2041-1723-
dc.identifier.isiWOS:001063751200001-
dc.publisher.placeBERLIN-
dc.identifier.issnl2041-1723-

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