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Article: Ab initio optimization of phonon drag effect for lowererature thermoelectric energy conversion

TitleAb initio optimization of phonon drag effect for lowererature thermoelectric energy conversion
Authors
KeywordsElectron phonon interaction
Nanocluster scattering
Nonequilibrium phonon
Phonon drag
Thermoelectrics
Issue Date2015
Citation
Proceedings of the National Academy of Sciences of the United States of America, 2015, v. 112, n. 48, p. 14777-14782 How to Cite?
AbstractAlthough the thermoelectric figure ofmerit zT above 300 K has seen significant improvement recently, the progress at lower temperatures has been slow, mainly limited by the relatively low Seebeck coefficient and high thermal conductivity. Here we report, for the first time to our knowledge, success in first-principles computation of the phonon drag effectâ€"a coupling phenomenon between electrons and nonequilibrium phononsâ€"in heavily doped region and its optimization to enhance the Seebeck coefficient while reducing the phonon thermal conductivity by nanostructuring. Our simulation quantitatively identifies the major phonons contributing to the phonon drag, which are spectrally distinct from those carrying heat, and further reveals that although the phonon drag is reduced in heavily doped samples, a significant contribution to Seebeck coefficient still exists. An ideal phonon filter is proposed to enhance zT of silicon at room temperature by a factor of 20 to â0.25, and the enhancement can reach 70 times at 100 K. This work opens up a new venue toward better thermoelectrics by harnessing nonequilibrium phonons.
Persistent Identifierhttp://hdl.handle.net/10722/343653
ISSN
2023 Impact Factor: 9.4
2023 SCImago Journal Rankings: 3.737

 

DC FieldValueLanguage
dc.contributor.authorZhou, Jiawei-
dc.contributor.authorLiao, Bolin-
dc.contributor.authorQiu, Bo-
dc.contributor.authorHuberman, Samuel-
dc.contributor.authorEsfarjani, Keivan-
dc.contributor.authorDresselhaus, Mildred S.-
dc.contributor.authorChen, Gang-
dc.date.accessioned2024-05-27T09:28:58Z-
dc.date.available2024-05-27T09:28:58Z-
dc.date.issued2015-
dc.identifier.citationProceedings of the National Academy of Sciences of the United States of America, 2015, v. 112, n. 48, p. 14777-14782-
dc.identifier.issn0027-8424-
dc.identifier.urihttp://hdl.handle.net/10722/343653-
dc.description.abstractAlthough the thermoelectric figure ofmerit zT above 300 K has seen significant improvement recently, the progress at lower temperatures has been slow, mainly limited by the relatively low Seebeck coefficient and high thermal conductivity. Here we report, for the first time to our knowledge, success in first-principles computation of the phonon drag effectâ€"a coupling phenomenon between electrons and nonequilibrium phononsâ€"in heavily doped region and its optimization to enhance the Seebeck coefficient while reducing the phonon thermal conductivity by nanostructuring. Our simulation quantitatively identifies the major phonons contributing to the phonon drag, which are spectrally distinct from those carrying heat, and further reveals that although the phonon drag is reduced in heavily doped samples, a significant contribution to Seebeck coefficient still exists. An ideal phonon filter is proposed to enhance zT of silicon at room temperature by a factor of 20 to â0.25, and the enhancement can reach 70 times at 100 K. This work opens up a new venue toward better thermoelectrics by harnessing nonequilibrium phonons.-
dc.languageeng-
dc.relation.ispartofProceedings of the National Academy of Sciences of the United States of America-
dc.subjectElectron phonon interaction-
dc.subjectNanocluster scattering-
dc.subjectNonequilibrium phonon-
dc.subjectPhonon drag-
dc.subjectThermoelectrics-
dc.titleAb initio optimization of phonon drag effect for lowererature thermoelectric energy conversion-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1073/pnas.1512328112-
dc.identifier.scopuseid_2-s2.0-84948681299-
dc.identifier.volume112-
dc.identifier.issue48-
dc.identifier.spage14777-
dc.identifier.epage14782-
dc.identifier.eissn1091-6490-

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