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Article: Boosting room-temperature thermoelectric performance of Mg3Sb1.5Bi0.5 material through breaking the contradiction between carrier concentration and carrier mobility
| Title | Boosting room-temperature thermoelectric performance of Mg3Sb1.5Bi0.5 material through breaking the contradiction between carrier concentration and carrier mobility |
|---|---|
| Authors | |
| Keywords | Efficiency Electronic scattering Mg3Sb1.5Bi0.5 Thermoelectric Two-donon strategy |
| Issue Date | 15-Feb-2024 |
| Publisher | Elsevier |
| Citation | Acta Materialia, 2024, v. 265 How to Cite? |
| Abstract | Recently, low-cost Mg3Sb2-yBiy-based materials with high performance near room temperatures have been reported, which are considered to be promising candidates for replacing commercial Bi2Te3-based materials. Herein, we report a high power factor of ∼3000 μW m−1 K−1 and a ZT value of 0.82 at room temperature in Ti0.05Mg3.15Sb1.5Bi0.49Te0.01. Ti dopant entering into the Mg1 sublattice slightly increases the carrier concentration by the introduction of impurity states and enhances the carrier mobility by the promotion of grain size growth. The two-donor doping strategy breaks the contradiction between carrier concentration and carrier mobility, thus significantly improving the electrical transport properties near room temperatures. In addition, the introduction of defects by Ti dopant contributes to the decreased lattice thermal conductivity. Consequently, a ZTavg value of 1.19 is obtained at 50–250 ℃, ranking the top among reported n-type thermoelectric materials. Moreover, the as-fabricated single-leg device shows an high engineering efficiency considering the radiation calibration, i.e., 7.2 % and 11.8 % at temperature differences of 250 ℃ and 500 ℃ with Tc = 0 ℃, respectively, demonstrating the great potential of substituting the commercial Bi2Te3-family. |
| Persistent Identifier | http://hdl.handle.net/10722/344775 |
| ISSN | 2023 Impact Factor: 8.3 2023 SCImago Journal Rankings: 2.916 |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Jiang, F | - |
| dc.contributor.author | Wu, X | - |
| dc.contributor.author | Zhu, Y | - |
| dc.contributor.author | Xia, C | - |
| dc.contributor.author | Han, Z | - |
| dc.contributor.author | Yu, H | - |
| dc.contributor.author | Chen, C | - |
| dc.contributor.author | Feng, T | - |
| dc.contributor.author | Mao, J | - |
| dc.contributor.author | Chen, Y | - |
| dc.contributor.author | Liu, W | - |
| dc.date.accessioned | 2024-08-12T04:07:20Z | - |
| dc.date.available | 2024-08-12T04:07:20Z | - |
| dc.date.issued | 2024-02-15 | - |
| dc.identifier.citation | Acta Materialia, 2024, v. 265 | - |
| dc.identifier.issn | 1359-6454 | - |
| dc.identifier.uri | http://hdl.handle.net/10722/344775 | - |
| dc.description.abstract | <p>Recently, low-cost Mg<sub>3</sub>Sb<sub>2-</sub><em><sub>y</sub></em>Bi<em><sub>y</sub></em>-based materials with high performance near room temperatures have been reported, which are considered to be promising candidates for replacing commercial Bi<sub>2</sub>Te<sub>3</sub>-based materials. Herein, we report a high power factor of ∼3000 μW m<sup>−1</sup> K<sup>−1</sup> and a <em>ZT</em> value of 0.82 at room temperature in Ti<sub>0.05</sub>Mg<sub>3.15</sub>Sb<sub>1.5</sub>Bi<sub>0.49</sub>Te<sub>0.01</sub>. Ti <a href="https://www.sciencedirect.com/topics/materials-science/doping-additives" title="Learn more about dopant from ScienceDirect's AI-generated Topic Pages">dopant</a> entering into the Mg1 <a href="https://www.sciencedirect.com/topics/engineering/sublattice" title="Learn more about sublattice from ScienceDirect's AI-generated Topic Pages">sublattice</a> slightly increases the carrier concentration by the introduction of impurity states and enhances the <a href="https://www.sciencedirect.com/topics/physics-and-astronomy/carrier-mobility" title="Learn more about carrier mobility from ScienceDirect's AI-generated Topic Pages">carrier mobility</a> by the promotion of <a href="https://www.sciencedirect.com/topics/physics-and-astronomy/grain-size" title="Learn more about grain size from ScienceDirect's AI-generated Topic Pages">grain size</a> growth. The two-donor doping strategy breaks the contradiction between carrier concentration and <a href="https://www.sciencedirect.com/topics/materials-science/carrier-mobility" title="Learn more about carrier mobility from ScienceDirect's AI-generated Topic Pages">carrier mobility</a>, thus significantly improving the electrical transport properties near room temperatures. In addition, the introduction of defects by Ti <a href="https://www.sciencedirect.com/topics/engineering/dopants" title="Learn more about dopant from ScienceDirect's AI-generated Topic Pages">dopant</a> contributes to the decreased lattice <a href="https://www.sciencedirect.com/topics/chemical-engineering/thermal-conductivity" title="Learn more about thermal conductivity from ScienceDirect's AI-generated Topic Pages">thermal conductivity</a>. Consequently, a <em>ZT<sub>avg</sub></em> value of 1.19 is obtained at 50–250 ℃, ranking the top among reported n-type <a href="https://www.sciencedirect.com/topics/materials-science/thermoelectric-materials" title="Learn more about thermoelectric materials from ScienceDirect's AI-generated Topic Pages">thermoelectric materials</a>. Moreover, the as-fabricated single-leg device shows an high engineering efficiency considering the radiation calibration, i.e., 7.2 % and 11.8 % at temperature differences of 250 ℃ and 500 ℃ with <em>T<sub>c</sub></em> = 0 ℃, respectively, demonstrating the great potential of substituting the commercial Bi<sub>2</sub>Te<sub>3</sub>-family.<br></p> | - |
| dc.language | eng | - |
| dc.publisher | Elsevier | - |
| dc.relation.ispartof | Acta Materialia | - |
| dc.rights | This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License. | - |
| dc.subject | Efficiency | - |
| dc.subject | Electronic scattering | - |
| dc.subject | Mg3Sb1.5Bi0.5 | - |
| dc.subject | Thermoelectric | - |
| dc.subject | Two-donon strategy | - |
| dc.title | Boosting room-temperature thermoelectric performance of Mg3Sb1.5Bi0.5 material through breaking the contradiction between carrier concentration and carrier mobility | - |
| dc.type | Article | - |
| dc.identifier.doi | 10.1016/j.actamat.2023.119636 | - |
| dc.identifier.scopus | eid_2-s2.0-85183681020 | - |
| dc.identifier.volume | 265 | - |
| dc.identifier.eissn | 1873-2453 | - |
| dc.identifier.issnl | 1359-6454 | - |