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Article: Creating Fluorine-Doped MoS2 Edge Electrodes with Enhanced Hydrogen Evolution Activity

TitleCreating Fluorine-Doped MoS<inf>2</inf> Edge Electrodes with Enhanced Hydrogen Evolution Activity
Authors
Keywordsactive sites
doping
hydrogen evolution reaction
MoS 2
on-chip electrocatalytic microdevices
Issue Date2021
Citation
Small Methods, 2021, v. 5, n. 11, article no. 2100612 How to Cite?
AbstractThe edge sites of MoS2 are catalytically active for hydrogen evolution reactions (HER). However, pristine edge sites usually contain only intrinsic atoms or defects, limiting the tuning of on-site hydrogen species adsorption and desorption, the critical steps for HER. In addition, the number of atoms on pristine edges is small compared to that of electrochemically inert atoms in bulk. Thus, it is desirable to develop a scalable technique of creating a large number of highly HER-active edge sites. Here, a plasma etching strategy is developed for creating MoS2 edge electrodes with a controllable number of active sites that enable the quantitative characterization of their HER activity using a local probe method. Fluorine atoms with large electronegativity are doped on the MoS2 edge sites that lead to a fivefold activity enhancement compared to that from pristine edges and is attributed to the more moderate binding energy for hydrogen species. The scalability of such a method is further demonstrated by activating MoS2 catalyst in macroscopic quantities with enhanced HER performance and stability. The work provides two-dimensional materials as a platform for understanding the doping effect on the edge sites at atomic-level, and offers a novel route for the design of efficient catalysts.
Persistent Identifierhttp://hdl.handle.net/10722/346788

 

DC FieldValueLanguage
dc.contributor.authorZhang, Ruihua-
dc.contributor.authorZhang, Mengru-
dc.contributor.authorYang, Hao-
dc.contributor.authorLi, Gen-
dc.contributor.authorXing, Shuming-
dc.contributor.authorLi, Mengyan-
dc.contributor.authorXu, Yiling-
dc.contributor.authorZhang, Qiuyue-
dc.contributor.authorHu, Sheng-
dc.contributor.authorLiao, Honggang-
dc.contributor.authorCao, Yang-
dc.date.accessioned2024-09-17T04:13:17Z-
dc.date.available2024-09-17T04:13:17Z-
dc.date.issued2021-
dc.identifier.citationSmall Methods, 2021, v. 5, n. 11, article no. 2100612-
dc.identifier.urihttp://hdl.handle.net/10722/346788-
dc.description.abstractThe edge sites of MoS2 are catalytically active for hydrogen evolution reactions (HER). However, pristine edge sites usually contain only intrinsic atoms or defects, limiting the tuning of on-site hydrogen species adsorption and desorption, the critical steps for HER. In addition, the number of atoms on pristine edges is small compared to that of electrochemically inert atoms in bulk. Thus, it is desirable to develop a scalable technique of creating a large number of highly HER-active edge sites. Here, a plasma etching strategy is developed for creating MoS2 edge electrodes with a controllable number of active sites that enable the quantitative characterization of their HER activity using a local probe method. Fluorine atoms with large electronegativity are doped on the MoS2 edge sites that lead to a fivefold activity enhancement compared to that from pristine edges and is attributed to the more moderate binding energy for hydrogen species. The scalability of such a method is further demonstrated by activating MoS2 catalyst in macroscopic quantities with enhanced HER performance and stability. The work provides two-dimensional materials as a platform for understanding the doping effect on the edge sites at atomic-level, and offers a novel route for the design of efficient catalysts.-
dc.languageeng-
dc.relation.ispartofSmall Methods-
dc.subjectactive sites-
dc.subjectdoping-
dc.subjecthydrogen evolution reaction-
dc.subjectMoS 2-
dc.subjecton-chip electrocatalytic microdevices-
dc.titleCreating Fluorine-Doped MoS<inf>2</inf> Edge Electrodes with Enhanced Hydrogen Evolution Activity-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/smtd.202100612-
dc.identifier.pmid34927980-
dc.identifier.scopuseid_2-s2.0-85114676772-
dc.identifier.volume5-
dc.identifier.issue11-
dc.identifier.spagearticle no. 2100612-
dc.identifier.epagearticle no. 2100612-
dc.identifier.eissn2366-9608-

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