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Article: Emergent multi-field interaction in a magnetic quasi-two-dimensional WSe2/SrCoO2.5/2DEG heterojunction

TitleEmergent multi-field interaction in a magnetic quasi-two-dimensional WSe2/SrCoO2.5/2DEG heterojunction
Authors
Issue Date8-Jul-2024
PublisherRoyal Society of Chemistry
Citation
Journal of Materials Chemistry C Materials for optical and electronic devices, 2024, v. 12, n. 32, p. 12582-12588 How to Cite?
Abstract

WSe2-based heterostructures are extensively enhanced by dielectric and interfacial engineering for high-performance photodetectors. However, it is difficult to integrate a magnetic three-dimensional (3D) thin film on the two-dimensional (2D) van der Waals heterostructure. In this study, a magnetic 2D p-WSe2/n-2DEG heterostructure with an inserted epitaxial SrCoO2.5 thin film is fabricated, and a p-n heterojunction is formed via an Ar+-ion-bombardment process. The fabricated device with a typical long depletion region responds to a broad spectral range from 447-808 nm within the wide temperature range of 10-300 K. In the dark and under light illumination, the magneto-optical response can be realized due to the self-charging process in the device. Furthermore, the adjustable multistate can be expected under multi-field interaction on the heterojunction, which can be controlled by the control signal as the light ON/OFF switching, bias, and magnetic field. Based on the experimental results and process simulation, it is demonstrated that the heterojunction with an optimized magnetic SrCoO2.5 design holds promise as a multimode logic gate, which can be implemented with complementary 2D/3D semiconductor design and fabrication processes.


Persistent Identifierhttp://hdl.handle.net/10722/351093
ISSN
2023 Impact Factor: 5.7
2023 SCImago Journal Rankings: 1.358

 

DC FieldValueLanguage
dc.contributor.authorZhang, Xinyue-
dc.contributor.authorXu, Chenyu-
dc.contributor.authorSun, Guangyao-
dc.contributor.authorLi, Kaifeng-
dc.contributor.authorYang, Hao-
dc.contributor.authorLiu, Guozhen-
dc.contributor.authorJiang, Yucheng-
dc.contributor.authorGao, Ju-
dc.contributor.authorLu, Hao-
dc.contributor.authorZhao, Run-
dc.contributor.authorTian, Wei-
dc.date.accessioned2024-11-09T00:35:49Z-
dc.date.available2024-11-09T00:35:49Z-
dc.date.issued2024-07-08-
dc.identifier.citationJournal of Materials Chemistry C Materials for optical and electronic devices, 2024, v. 12, n. 32, p. 12582-12588-
dc.identifier.issn2050-7526-
dc.identifier.urihttp://hdl.handle.net/10722/351093-
dc.description.abstract<p>WSe2-based heterostructures are extensively enhanced by dielectric and interfacial engineering for high-performance photodetectors. However, it is difficult to integrate a magnetic three-dimensional (3D) thin film on the two-dimensional (2D) van der Waals heterostructure. In this study, a magnetic 2D p-WSe2/n-2DEG heterostructure with an inserted epitaxial SrCoO2.5 thin film is fabricated, and a p-n heterojunction is formed via an Ar+-ion-bombardment process. The fabricated device with a typical long depletion region responds to a broad spectral range from 447-808 nm within the wide temperature range of 10-300 K. In the dark and under light illumination, the magneto-optical response can be realized due to the self-charging process in the device. Furthermore, the adjustable multistate can be expected under multi-field interaction on the heterojunction, which can be controlled by the control signal as the light ON/OFF switching, bias, and magnetic field. Based on the experimental results and process simulation, it is demonstrated that the heterojunction with an optimized magnetic SrCoO2.5 design holds promise as a multimode logic gate, which can be implemented with complementary 2D/3D semiconductor design and fabrication processes.</p>-
dc.languageeng-
dc.publisherRoyal Society of Chemistry-
dc.relation.ispartofJournal of Materials Chemistry C Materials for optical and electronic devices-
dc.titleEmergent multi-field interaction in a magnetic quasi-two-dimensional WSe2/SrCoO2.5/2DEG heterojunction-
dc.typeArticle-
dc.identifier.doi10.1039/d4tc02341b-
dc.identifier.scopuseid_2-s2.0-85199310060-
dc.identifier.volume12-
dc.identifier.issue32-
dc.identifier.spage12582-
dc.identifier.epage12588-
dc.identifier.eissn2050-7534-
dc.identifier.issnl2050-7526-

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