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Book Chapter: Heating issues in wide-bandgap semiconductor devices

TitleHeating issues in wide-bandgap semiconductor devices
Authors
KeywordsHeating issues
Packaging
Power electronics
Radio frequency
Semiconductor devices
Thermal management
Wide-bandgap semiconductors
Issue Date2022
Citation
Thermal Management of Gallium Nitride Electronics, 2022, p. 1-19 How to Cite?
AbstractHeat presents a limit to the performance of semiconductor devices, especially in power switches and radio frequency (RF) amplifiers, where the limits are constantly being pushed to higher voltages and higher power. This introductory chapter provides an application-oriented overview of heating issues in wide-bandgap semiconductor devices, their impact on device characteristics, and their management approaches. Heat generated during device operation impacts device maximum operation current density, carrier mobility, current collapse, reliability, robustness, and maximum operation junction temperature. With research advancing in the field of power and RF electronics, many topics for managing heating issues within devices have gained traction. The increased availability and improved growth techniques for high thermal conductivity dielectrics and substrates have allowed for enhanced heat dissipation and mitigation during device operation. Advanced device designs and architectures have allowed for spatially distributed electric field and current and thereby alleviated hot spots within a device. Lastly, improved electronics packaging with new materials and cooling approaches can enable effective heat extraction from semiconductor devices.
Persistent Identifierhttp://hdl.handle.net/10722/352323

 

DC FieldValueLanguage
dc.contributor.authorSpencer, Joseph A.-
dc.contributor.authorMock, Alyssa L.-
dc.contributor.authorZhang, Yuhao-
dc.date.accessioned2024-12-16T03:58:15Z-
dc.date.available2024-12-16T03:58:15Z-
dc.date.issued2022-
dc.identifier.citationThermal Management of Gallium Nitride Electronics, 2022, p. 1-19-
dc.identifier.urihttp://hdl.handle.net/10722/352323-
dc.description.abstractHeat presents a limit to the performance of semiconductor devices, especially in power switches and radio frequency (RF) amplifiers, where the limits are constantly being pushed to higher voltages and higher power. This introductory chapter provides an application-oriented overview of heating issues in wide-bandgap semiconductor devices, their impact on device characteristics, and their management approaches. Heat generated during device operation impacts device maximum operation current density, carrier mobility, current collapse, reliability, robustness, and maximum operation junction temperature. With research advancing in the field of power and RF electronics, many topics for managing heating issues within devices have gained traction. The increased availability and improved growth techniques for high thermal conductivity dielectrics and substrates have allowed for enhanced heat dissipation and mitigation during device operation. Advanced device designs and architectures have allowed for spatially distributed electric field and current and thereby alleviated hot spots within a device. Lastly, improved electronics packaging with new materials and cooling approaches can enable effective heat extraction from semiconductor devices.-
dc.languageeng-
dc.relation.ispartofThermal Management of Gallium Nitride Electronics-
dc.subjectHeating issues-
dc.subjectPackaging-
dc.subjectPower electronics-
dc.subjectRadio frequency-
dc.subjectSemiconductor devices-
dc.subjectThermal management-
dc.subjectWide-bandgap semiconductors-
dc.titleHeating issues in wide-bandgap semiconductor devices-
dc.typeBook_Chapter-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/B978-0-12-821084-0.00003-2-
dc.identifier.scopuseid_2-s2.0-85142559449-
dc.identifier.spage1-
dc.identifier.epage19-

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