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Article: GaN-filled carbon nanotubes: Synthesis and photoluminescence

TitleGaN-filled carbon nanotubes: Synthesis and photoluminescence
Authors
Zhi, C. Y.Zhong, D. Y.Wang, E. G.
Issue Date2003
Citation
Chemical Physics Letters, 2003, v. 381, n. 5-6, p. 715-719 How to Cite?
DOI: http://dx.doi.org/10.1016/j.cplett.2003.09.141
AbstractEmploying a GaAs substrate, GaN nanowires encapsulated in carbon nanotubes are synthesized by microwave-plasma-enhanced chemical vapor deposition. Almost 100% of the carbon nanotubes are filled with GaN. Both high-resolution transmission electron microscopy and selected area electron diffraction pattern reveal high crystallization in the GaN nanowires. The formation mechanism of the GaN-core/C-shell structure is discussed, emphasizing chemistry's influence on the structure produced, particularly the role of Ga from the substrate. Photoluminescence measurements reveal an ultraviolet band located at 3.35 eV and a yellow band located at 2.20 eV. The redshift of the ultraviolet band is attributed to N vacancies that result from the Ga-rich conditions of growth. © 2003 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/359768
ISSN
0009-2614
2023 Impact Factor: 2.8
2023 SCImago Journal Rankings: 0.502

 

DC FieldValueLanguage
dc.contributor.authorZhi, C. Y.-
dc.contributor.authorZhong, D. Y.-
dc.contributor.authorWang, E. G.-
dc.date.accessioned2025-09-10T09:03:11Z-
dc.date.available2025-09-10T09:03:11Z-
dc.date.issued2003-
dc.identifier.citationChemical Physics Letters, 2003, v. 381, n. 5-6, p. 715-719-
dc.identifier.issn0009-2614-
dc.identifier.urihttp://hdl.handle.net/10722/359768-
dc.description.abstractEmploying a GaAs substrate, GaN nanowires encapsulated in carbon nanotubes are synthesized by microwave-plasma-enhanced chemical vapor deposition. Almost 100% of the carbon nanotubes are filled with GaN. Both high-resolution transmission electron microscopy and selected area electron diffraction pattern reveal high crystallization in the GaN nanowires. The formation mechanism of the GaN-core/C-shell structure is discussed, emphasizing chemistry's influence on the structure produced, particularly the role of Ga from the substrate. Photoluminescence measurements reveal an ultraviolet band located at 3.35 eV and a yellow band located at 2.20 eV. The redshift of the ultraviolet band is attributed to N vacancies that result from the Ga-rich conditions of growth. © 2003 Elsevier B.V. All rights reserved.-
dc.languageeng-
dc.relation.ispartofChemical Physics Letters-
dc.titleGaN-filled carbon nanotubes: Synthesis and photoluminescence-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.cplett.2003.09.141-
dc.identifier.scopuseid_2-s2.0-0242559103-
dc.identifier.volume381-
dc.identifier.issue5-6-
dc.identifier.spage715-
dc.identifier.epage719-

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