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Article: Electronic structure of boron nitride cone-shaped nanostructures

TitleElectronic structure of boron nitride cone-shaped nanostructures
Authors
Issue Date2005
Citation
Physical Review B Condensed Matter and Materials Physics, 2005, v. 72, n. 24, article no. 245419 How to Cite?
AbstractBoron nitride nanohorns (BNNHs) were synthesized in a large-scale. Detailed transmission electron microscopy investigations reveal that a BNNH consists of boron nitride cone-shaped nanostructures (BNCNSs) with different disclination angles. Systematic studies of electronic structure of a BNCNS with different disclination angles and different defects were performed by first-principles calculations. The results imply that the electronic structure of a BNCNS weakly depends on the disclination angles; by contrast, it is strongly influenced by the types of line-bond defects (B-B or N-N bonds). Importantly, our calculations show that a BNNH can be the junction made of semiconducting nanostructures with various energy gaps. © 2005 The American Physical Society.
Persistent Identifierhttp://hdl.handle.net/10722/359828
ISSN
2014 Impact Factor: 3.736

 

DC FieldValueLanguage
dc.contributor.authorZhi, Chunyi-
dc.contributor.authorBando, Yoshio-
dc.contributor.authorTang, Chengchun-
dc.contributor.authorGolberg, Dmitri-
dc.date.accessioned2025-09-10T09:03:34Z-
dc.date.available2025-09-10T09:03:34Z-
dc.date.issued2005-
dc.identifier.citationPhysical Review B Condensed Matter and Materials Physics, 2005, v. 72, n. 24, article no. 245419-
dc.identifier.issn1098-0121-
dc.identifier.urihttp://hdl.handle.net/10722/359828-
dc.description.abstractBoron nitride nanohorns (BNNHs) were synthesized in a large-scale. Detailed transmission electron microscopy investigations reveal that a BNNH consists of boron nitride cone-shaped nanostructures (BNCNSs) with different disclination angles. Systematic studies of electronic structure of a BNCNS with different disclination angles and different defects were performed by first-principles calculations. The results imply that the electronic structure of a BNCNS weakly depends on the disclination angles; by contrast, it is strongly influenced by the types of line-bond defects (B-B or N-N bonds). Importantly, our calculations show that a BNNH can be the junction made of semiconducting nanostructures with various energy gaps. © 2005 The American Physical Society.-
dc.languageeng-
dc.relation.ispartofPhysical Review B Condensed Matter and Materials Physics-
dc.titleElectronic structure of boron nitride cone-shaped nanostructures-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1103/PhysRevB.72.245419-
dc.identifier.scopuseid_2-s2.0-29644443506-
dc.identifier.volume72-
dc.identifier.issue24-
dc.identifier.spagearticle no. 245419-
dc.identifier.epagearticle no. 245419-
dc.identifier.eissn1550-235X-

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