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Article: Silicon multi-branch nanostructures for decent field emission and excellent electrical transport

TitleSilicon multi-branch nanostructures for decent field emission and excellent electrical transport
Authors
Issue Date2011
Citation
Nanotechnology, 2011, v. 22, n. 14, article no. 145705 How to Cite?
AbstractWe report on the synthesis, field electron emission and electric transport properties of a novel nanomaterial: ordered arrays of crystallized silicon multi-branch nanostructures. A decent field electron emission with relatively low turn-on field of 3.16Vνm-1 and high field-enhancement factor of 1252 was received for the silicon nanobranches. The relevancies between field-emission current-voltage characteristic, turn-on field, threshold field and sample-anode distance have been thoroughly analyzed. In addition, electrical transport measurements revealed a small electrical resistance of 0.51MΩ for as-prepared silicon nanobranches. In contrast, by improving the silicon nanobranch-electrode contact, vacuum annealing dramatically reduced the electrical resistance, by a factor approaching two, while thermal oxidation resulted in a much higher resistance due to the amorphous oxide coating of the silicon nanobranches, both of the current versus voltage curves became more linear and symmetrical, and the transport stability was obviously improved. © 2011 IOP Publishing Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/359883
ISSN
2023 Impact Factor: 2.9
2023 SCImago Journal Rankings: 0.631

 

DC FieldValueLanguage
dc.contributor.authorSun, Min-
dc.contributor.authorGao, Yihua-
dc.contributor.authorZhi, Chunyi-
dc.contributor.authorBando, Yoshio-
dc.contributor.authorGolberg, Dmitri-
dc.date.accessioned2025-09-10T09:03:51Z-
dc.date.available2025-09-10T09:03:51Z-
dc.date.issued2011-
dc.identifier.citationNanotechnology, 2011, v. 22, n. 14, article no. 145705-
dc.identifier.issn0957-4484-
dc.identifier.urihttp://hdl.handle.net/10722/359883-
dc.description.abstractWe report on the synthesis, field electron emission and electric transport properties of a novel nanomaterial: ordered arrays of crystallized silicon multi-branch nanostructures. A decent field electron emission with relatively low turn-on field of 3.16Vνm<sup>-1</sup> and high field-enhancement factor of 1252 was received for the silicon nanobranches. The relevancies between field-emission current-voltage characteristic, turn-on field, threshold field and sample-anode distance have been thoroughly analyzed. In addition, electrical transport measurements revealed a small electrical resistance of 0.51MΩ for as-prepared silicon nanobranches. In contrast, by improving the silicon nanobranch-electrode contact, vacuum annealing dramatically reduced the electrical resistance, by a factor approaching two, while thermal oxidation resulted in a much higher resistance due to the amorphous oxide coating of the silicon nanobranches, both of the current versus voltage curves became more linear and symmetrical, and the transport stability was obviously improved. © 2011 IOP Publishing Ltd.-
dc.languageeng-
dc.relation.ispartofNanotechnology-
dc.titleSilicon multi-branch nanostructures for decent field emission and excellent electrical transport-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/0957-4484/22/14/145705-
dc.identifier.scopuseid_2-s2.0-79952661863-
dc.identifier.volume22-
dc.identifier.issue14-
dc.identifier.spagearticle no. 145705-
dc.identifier.epagearticle no. 145705-
dc.identifier.eissn1361-6528-

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