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Book Chapter: The Development and Processing of Advanced Low-Dimensional Semiconductors

TitleThe Development and Processing of Advanced Low-Dimensional Semiconductors
Authors
Issue Date2024
Citation
Handbook of Semiconductors Fundamentals to Emerging Applications, 2024, p. 122-136 How to Cite?
AbstractThe development of materials has accompanied the modernization of human civilization. Since the end of the 20th century and the “Silicon Age,” the hallmark of the modern historical period of the 21st century, research on new materials has received increasing attention. We will introduce the representative traditional semiconductor and the related eight fabrication process. In recent decades, low dimensional (LD) semiconductors, including carbon-based allotropes, phosphorus allotropes, and transition-metal dichalcogenides (TMDs), were expected to be critical components for electronic devices and have developed rapidly. Then eight basic properties of LD materials were presented. The advantages and related challenges were analysts for various LD materials. The existing multiple semiconductor materials and processing techniques have remarkable application effects in the military, communication, and electronic information. Also, there are still many problems, such as processing difficulties, strict environmental conditions, and defects in semiconductor materials. The application of LD materials is limited by their size constraints, large dark current, high noise, low quantum efficiency, and slow response speed. Therefore, on the path of semiconductor development, we will discuss and propose what materials and methods will be facilities for the intrinsic properties of each type of semiconductor. Finally, we will have an outlook for the next generation of semiconductors.
Persistent Identifierhttp://hdl.handle.net/10722/360326

 

DC FieldValueLanguage
dc.contributor.authorLiu, Xinghui-
dc.contributor.authorXin, Shiheng-
dc.contributor.authorZhang, Fuchun-
dc.contributor.authorZhi, Chunyi-
dc.date.accessioned2025-09-10T09:06:16Z-
dc.date.available2025-09-10T09:06:16Z-
dc.date.issued2024-
dc.identifier.citationHandbook of Semiconductors Fundamentals to Emerging Applications, 2024, p. 122-136-
dc.identifier.urihttp://hdl.handle.net/10722/360326-
dc.description.abstractThe development of materials has accompanied the modernization of human civilization. Since the end of the 20th century and the “Silicon Age,” the hallmark of the modern historical period of the 21st century, research on new materials has received increasing attention. We will introduce the representative traditional semiconductor and the related eight fabrication process. In recent decades, low dimensional (LD) semiconductors, including carbon-based allotropes, phosphorus allotropes, and transition-metal dichalcogenides (TMDs), were expected to be critical components for electronic devices and have developed rapidly. Then eight basic properties of LD materials were presented. The advantages and related challenges were analysts for various LD materials. The existing multiple semiconductor materials and processing techniques have remarkable application effects in the military, communication, and electronic information. Also, there are still many problems, such as processing difficulties, strict environmental conditions, and defects in semiconductor materials. The application of LD materials is limited by their size constraints, large dark current, high noise, low quantum efficiency, and slow response speed. Therefore, on the path of semiconductor development, we will discuss and propose what materials and methods will be facilities for the intrinsic properties of each type of semiconductor. Finally, we will have an outlook for the next generation of semiconductors.-
dc.languageeng-
dc.relation.ispartofHandbook of Semiconductors Fundamentals to Emerging Applications-
dc.titleThe Development and Processing of Advanced Low-Dimensional Semiconductors-
dc.typeBook_Chapter-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1201/9781003450146-10-
dc.identifier.scopuseid_2-s2.0-85200191281-
dc.identifier.spage122-
dc.identifier.epage136-

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