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Article: Controlled growth of Cu3Se2 nanosheets array counter electrode for quantum dots sensitized solar cell through ion exchange

TitleControlled growth of Cu3Se2 nanosheets array counter electrode for quantum dots sensitized solar cell through ion exchange
Authors
Keywordscounter electrode
Cu3Se2
ion exchange
quantum dots sensitized solar cell
Issue Date2017
Citation
Science China Materials, 2017, v. 60, n. 7, p. 637-645 How to Cite?
AbstractCopper selenide (CuxSe) has great potential as counter electrode for quantum dots sensitized solar cell (QDSSC) due to its excellent electrocatalytic activity and lower charge transfer resistance. A novel ion exchange method has been utilized to fabricate Cu3Se2 nanosheets array counter electrode. CdS layer was first deposited by sputtering and used as a template to grow compact and uniform Cu3Se2 film in a typical chemical bath. The morphology and thickness of the Cu3Se2 nanosheets were controlled by the deposition time. The final products (2h-Cu3Se2) showed significantly improved electrochemical catalytic activity and carrier transport property, leading to a much increased power conversion efficiency (4.01%) when compared with the CuS counter electrode CdS/CdSe QDSSC (3.21%).
Persistent Identifierhttp://hdl.handle.net/10722/365589
ISSN
2023 Impact Factor: 6.8
2023 SCImago Journal Rankings: 1.634

 

DC FieldValueLanguage
dc.contributor.authorBai, Huiwen-
dc.contributor.authorShen, Ting-
dc.contributor.authorWang, Shixun-
dc.contributor.authorLi, Bo-
dc.contributor.authorCao, Guozhong-
dc.contributor.authorTian, Jianjun-
dc.date.accessioned2025-11-05T09:46:13Z-
dc.date.available2025-11-05T09:46:13Z-
dc.date.issued2017-
dc.identifier.citationScience China Materials, 2017, v. 60, n. 7, p. 637-645-
dc.identifier.issn2095-8226-
dc.identifier.urihttp://hdl.handle.net/10722/365589-
dc.description.abstractCopper selenide (Cu<inf>x</inf>Se) has great potential as counter electrode for quantum dots sensitized solar cell (QDSSC) due to its excellent electrocatalytic activity and lower charge transfer resistance. A novel ion exchange method has been utilized to fabricate Cu3Se2 nanosheets array counter electrode. CdS layer was first deposited by sputtering and used as a template to grow compact and uniform Cu<inf>3</inf>Se<inf>2</inf> film in a typical chemical bath. The morphology and thickness of the Cu<inf>3</inf>Se<inf>2</inf> nanosheets were controlled by the deposition time. The final products (2h-Cu<inf>3</inf>Se<inf>2</inf>) showed significantly improved electrochemical catalytic activity and carrier transport property, leading to a much increased power conversion efficiency (4.01%) when compared with the CuS counter electrode CdS/CdSe QDSSC (3.21%).-
dc.languageeng-
dc.relation.ispartofScience China Materials-
dc.subjectcounter electrode-
dc.subjectCu3Se2-
dc.subjection exchange-
dc.subjectquantum dots sensitized solar cell-
dc.titleControlled growth of Cu3Se2 nanosheets array counter electrode for quantum dots sensitized solar cell through ion exchange-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1007/s40843-017-9037-1-
dc.identifier.scopuseid_2-s2.0-85029779696-
dc.identifier.volume60-
dc.identifier.issue7-
dc.identifier.spage637-
dc.identifier.epage645-
dc.identifier.eissn2199-4501-

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