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Article: Growth and characteristics of La 2 O 3 gate dielectric prepared by low pressure metalorganic chemical vapor deposition

TitleGrowth and characteristics of La 2 O 3 gate dielectric prepared by low pressure metalorganic chemical vapor deposition
Authors
Cheng, Jin BoLi, Ai DongShao, Qi YueLing, Hui QinWu, DiWang, YuanBao, Yong JunWang, MuLiu, Zhi GuoMing, Nai Ben
KeywordsGate dielectric
High k
La 2 O 3 films
MOCVD
Issue Date2004
Citation
Applied Surface Science, 2004, v. 233, n. 1-4, p. 91-98 How to Cite?
DOI: http://dx.doi.org/10.1016/j.apsusc.2004.03.232
AbstractUltrathin La 2 O 3 gate dielectric films were prepared on Si substrate using La(tmhd) 3 source by low pressure metalorganic chemical vapor deposition (MOCVD). The growth processing, interfacial structure and electrical properties have been investigated by various techniques. The ultrathin films deposited at 600 show amorphous structure with smaller roughness of ∼0.2nm and larger band gap of E g =6.18eV. This is attributed to the interfacial layer existence of compositionally graded La-Si-O silicate. Due to the chemical instability of La 2 O 3 films in ambient, it can absorb vapor and carbon dioxide, which leads to the deterioration of electrical properties. By introducing Al 2 O 3 capping layer, the reliable value of equivalent oxide thickness around 1.8nm of La 2 O 3 /Si has been achieved. © 2004 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/369023
ISSN
0169-4332
2023 Impact Factor: 6.3
2023 SCImago Journal Rankings: 1.210

 

DC FieldValueLanguage
dc.contributor.authorCheng, Jin Bo-
dc.contributor.authorLi, Ai Dong-
dc.contributor.authorShao, Qi Yue-
dc.contributor.authorLing, Hui Qin-
dc.contributor.authorWu, Di-
dc.contributor.authorWang, Yuan-
dc.contributor.authorBao, Yong Jun-
dc.contributor.authorWang, Mu-
dc.contributor.authorLiu, Zhi Guo-
dc.contributor.authorMing, Nai Ben-
dc.date.accessioned2026-01-16T03:15:14Z-
dc.date.available2026-01-16T03:15:14Z-
dc.date.issued2004-
dc.identifier.citationApplied Surface Science, 2004, v. 233, n. 1-4, p. 91-98-
dc.identifier.issn0169-4332-
dc.identifier.urihttp://hdl.handle.net/10722/369023-
dc.description.abstractUltrathin La <inf>2</inf> O <inf>3</inf> gate dielectric films were prepared on Si substrate using La(tmhd) <inf>3</inf> source by low pressure metalorganic chemical vapor deposition (MOCVD). The growth processing, interfacial structure and electrical properties have been investigated by various techniques. The ultrathin films deposited at 600 show amorphous structure with smaller roughness of ∼0.2nm and larger band gap of E <inf>g</inf> =6.18eV. This is attributed to the interfacial layer existence of compositionally graded La-Si-O silicate. Due to the chemical instability of La <inf>2</inf> O <inf>3</inf> films in ambient, it can absorb vapor and carbon dioxide, which leads to the deterioration of electrical properties. By introducing Al <inf>2</inf> O <inf>3</inf> capping layer, the reliable value of equivalent oxide thickness around 1.8nm of La <inf>2</inf> O <inf>3</inf> /Si has been achieved. © 2004 Elsevier B.V. All rights reserved.-
dc.languageeng-
dc.relation.ispartofApplied Surface Science-
dc.subjectGate dielectric-
dc.subjectHigh k-
dc.subjectLa 2 O 3 films-
dc.subjectMOCVD-
dc.titleGrowth and characteristics of La 2 O 3 gate dielectric prepared by low pressure metalorganic chemical vapor deposition-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.apsusc.2004.03.232-
dc.identifier.scopuseid_2-s2.0-2942672871-
dc.identifier.volume233-
dc.identifier.issue1-4-
dc.identifier.spage91-
dc.identifier.epage98-

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