File Download
Links for fulltext
(May Require Subscription)
- Publisher Website: 10.1063/1.365693
- Scopus: eid_2-s2.0-0001126889
- WOS: WOS:A1997YA57200034
- Find via
Supplementary
- Citations:
- Appears in Collections:
Article: Saturated electric field effect at semi-insulating GaAs-metal junctions studied with a low energy positron beam
Title | Saturated electric field effect at semi-insulating GaAs-metal junctions studied with a low energy positron beam |
---|---|
Authors | |
Keywords | Physics engineering |
Issue Date | 1997 |
Publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp |
Citation | Journal of Applied Physics, 1997, v. 82 n. 8, p. 3891-3899 How to Cite? |
Abstract | The interfacial electric field established under different reverse bias conditions in Au and Ni on semi-insulating GaAs junctions has been studied by means of a low energy positron beam. The technique used is that of monitoring the positron drift to the interface through changes in the annihilation radiation lineshape as a function of incident positron beam energy at different reverse biases The data show a small but clear electric field drift of positrons towards the interface that increases more rapidly at low voltages (less than 50 V) which at higher biases tends towards saturation This confirmation of electric field saturation adds further weight to the picture of an electric field enhanced electron capture cross section for the ionized EL2 defect. Electric field values extracted from the data are compared with results from other techniques and suggest that enhanced electron capture is already occurring at the relatively low built-in fields (∼1 kV cm-1) found at the unbiased junction, with a rapid increase of EL2+ neutralization occurring for biases above 10 V. At still higher fields ∼10 kV cm-1 (biases>50 V), there appears to be an additional threshold for more complete EL2+ neutralization adjacent to the contact. The present study clearly demonstrates the often overlooked necessity of catering for built-in electric fields in positron diffusivity studies of III-V semiconductors where surface midgap Fermi-level pinning is common. © 1997 American Institute of Physics. |
Persistent Identifier | http://hdl.handle.net/10722/42179 |
ISSN | 2023 Impact Factor: 2.7 2023 SCImago Journal Rankings: 0.649 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hu, YF | en_HK |
dc.contributor.author | Ling, CC | en_HK |
dc.contributor.author | Beling, CD | en_HK |
dc.contributor.author | Fung, S | en_HK |
dc.date.accessioned | 2007-01-08T02:31:07Z | - |
dc.date.available | 2007-01-08T02:31:07Z | - |
dc.date.issued | 1997 | en_HK |
dc.identifier.citation | Journal of Applied Physics, 1997, v. 82 n. 8, p. 3891-3899 | - |
dc.identifier.issn | 0021-8979 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/42179 | - |
dc.description.abstract | The interfacial electric field established under different reverse bias conditions in Au and Ni on semi-insulating GaAs junctions has been studied by means of a low energy positron beam. The technique used is that of monitoring the positron drift to the interface through changes in the annihilation radiation lineshape as a function of incident positron beam energy at different reverse biases The data show a small but clear electric field drift of positrons towards the interface that increases more rapidly at low voltages (less than 50 V) which at higher biases tends towards saturation This confirmation of electric field saturation adds further weight to the picture of an electric field enhanced electron capture cross section for the ionized EL2 defect. Electric field values extracted from the data are compared with results from other techniques and suggest that enhanced electron capture is already occurring at the relatively low built-in fields (∼1 kV cm-1) found at the unbiased junction, with a rapid increase of EL2+ neutralization occurring for biases above 10 V. At still higher fields ∼10 kV cm-1 (biases>50 V), there appears to be an additional threshold for more complete EL2+ neutralization adjacent to the contact. The present study clearly demonstrates the often overlooked necessity of catering for built-in electric fields in positron diffusivity studies of III-V semiconductors where surface midgap Fermi-level pinning is common. © 1997 American Institute of Physics. | en_HK |
dc.format.extent | 164627 bytes | - |
dc.format.extent | 9781 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.format.mimetype | text/plain | - |
dc.language | eng | en_HK |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp | en_HK |
dc.relation.ispartof | Journal of Applied Physics | en_HK |
dc.rights | Copyright 1997 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 1997, v. 82 n. 8, p. 3891-3899 and may be found at https://doi.org/10.1063/1.365693 | - |
dc.subject | Physics engineering | en_HK |
dc.title | Saturated electric field effect at semi-insulating GaAs-metal junctions studied with a low energy positron beam | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=82&issue=8&spage=3891&epage=3899&date=1997&atitle=Saturated+electric+field+effect+at+semi-insulating+GaAs-metal+junctions+studied+with+a+low+energy+positron+beam | en_HK |
dc.identifier.email | Ling, CC: ccling@hkucc.hku.hk | en_HK |
dc.identifier.email | Beling, CD: cdbeling@hkucc.hku.hk | en_HK |
dc.identifier.email | Fung, S: sfung@hku.hk | en_HK |
dc.identifier.authority | Ling, CC=rp00747 | en_HK |
dc.identifier.authority | Beling, CD=rp00660 | en_HK |
dc.identifier.authority | Fung, S=rp00695 | en_HK |
dc.description.nature | published_or_final_version | en_HK |
dc.identifier.doi | 10.1063/1.365693 | en_HK |
dc.identifier.scopus | eid_2-s2.0-0001126889 | en_HK |
dc.identifier.hkuros | 28858 | - |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-0001126889&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 82 | en_HK |
dc.identifier.issue | 8 | en_HK |
dc.identifier.spage | 3891 | en_HK |
dc.identifier.epage | 3899 | en_HK |
dc.identifier.isi | WOS:A1997YA57200034 | - |
dc.publisher.place | United States | en_HK |
dc.identifier.scopusauthorid | Hu, YF=7407119615 | en_HK |
dc.identifier.scopusauthorid | Ling, CC=13310239300 | en_HK |
dc.identifier.scopusauthorid | Beling, CD=7005864180 | en_HK |
dc.identifier.scopusauthorid | Fung, S=7201970040 | en_HK |
dc.identifier.issnl | 0021-8979 | - |