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Article: Numerical modeling of transient characteristics of photovoltage in Schottky contacts

TitleNumerical modeling of transient characteristics of photovoltage in Schottky contacts
Authors
Chen, TPHo, SMFung, SBeling, CD
KeywordsPhysics engineering
Issue Date1994
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 1994, v. 76 n. 11, p. 7624-7626 How to Cite?
DOI: http://dx.doi.org/10.1063/1.358522
AbstractNumerical modeling of the transient characteristics of the photovoltage at metal-semiconductor interfaces has been carried out with a simple model in which the contributions of different current transport processes including thermionic emission, tunneling, carrier recombination, and leakage current have been taken into account. The simulation gives the detailed dependence of the transient characteristics on temperature, doping concentration, Schottky barrier height, and leakage resistance. © 1994 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42182
ISSN
0021-8979
2021 Impact Factor: 2.877
2020 SCImago Journal Rankings: 0.699
ISI Accession Number ID
WOS:A1994PU81800070

 

DC FieldValueLanguage
dc.contributor.authorChen, TPen_HK
dc.contributor.authorHo, SMen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.date.accessioned2007-01-08T02:31:10Z-
dc.date.available2007-01-08T02:31:10Z-
dc.date.issued1994en_HK
dc.identifier.citationJournal of Applied Physics, 1994, v. 76 n. 11, p. 7624-7626-
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42182-
dc.description.abstractNumerical modeling of the transient characteristics of the photovoltage at metal-semiconductor interfaces has been carried out with a simple model in which the contributions of different current transport processes including thermionic emission, tunneling, carrier recombination, and leakage current have been taken into account. The simulation gives the detailed dependence of the transient characteristics on temperature, doping concentration, Schottky barrier height, and leakage resistance. © 1994 American Institute of Physics.en_HK
dc.format.extent326600 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCopyright 1994 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 1994, v. 76 n. 11, p. 7624-7626 and may be found at https://doi.org/10.1063/1.358522-
dc.subjectPhysics engineeringen_HK
dc.titleNumerical modeling of transient characteristics of photovoltage in Schottky contactsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=76&issue=11&spage=7624&epage=7626&date=1994&atitle=Numerical+modeling+of+transient+characteristics+of+photovoltage+in+Schottky+contactsen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.358522en_HK
dc.identifier.scopuseid_2-s2.0-36448998796en_HK
dc.identifier.hkuros3329-
dc.identifier.volume76en_HK
dc.identifier.issue11en_HK
dc.identifier.spage7624en_HK
dc.identifier.epage7626en_HK
dc.identifier.isiWOS:A1994PU81800070-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChen, TP=36442234400en_HK
dc.identifier.scopusauthoridHo, SM=36347092600en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.issnl0021-8979-

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