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Article: Effects of annealing on the electrical properties of Fe-doped InP

TitleEffects of annealing on the electrical properties of Fe-doped InP
Authors
Zhao, YWFung, SBeling, CDSun, NFSun, TNChen, XDYang, GY
KeywordsPhysics engineering
Issue Date1999
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 1999, v. 86 n. 2, p. 981-984 How to Cite?
DOI: http://dx.doi.org/10.1063/1.370835
AbstractThe electrical properties of Fe-doped semi-insulating (SI) InP were investigated before and after annealing. The annealing conditions were controlled by changing either the temperature or duration. Correlation between the change of electrical parameters with the change of defect concentration at different annealing stage was observed. The defects and the change of the concentrations in Fe-doped SI InP were detected by room-temperature photocurrent spectroscopy.
Persistent Identifierhttp://hdl.handle.net/10722/42191
ISSN
0021-8979
2021 Impact Factor: 2.877
2020 SCImago Journal Rankings: 0.699
ISI Accession Number ID
WOS:000081171800044
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorZhao, YWen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorSun, NFen_HK
dc.contributor.authorSun, TNen_HK
dc.contributor.authorChen, XDen_HK
dc.contributor.authorYang, GYen_HK
dc.date.accessioned2007-01-08T02:31:20Z-
dc.date.available2007-01-08T02:31:20Z-
dc.date.issued1999en_HK
dc.identifier.citationJournal of Applied Physics, 1999, v. 86 n. 2, p. 981-984-
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42191-
dc.description.abstractThe electrical properties of Fe-doped semi-insulating (SI) InP were investigated before and after annealing. The annealing conditions were controlled by changing either the temperature or duration. Correlation between the change of electrical parameters with the change of defect concentration at different annealing stage was observed. The defects and the change of the concentrations in Fe-doped SI InP were detected by room-temperature photocurrent spectroscopy.en_HK
dc.format.extent65182 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCopyright 1999 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 1999, v. 86 n. 2, p. 981-984 and may be found at https://doi.org/10.1063/1.370835-
dc.subjectPhysics engineeringen_HK
dc.titleEffects of annealing on the electrical properties of Fe-doped InPen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=86&issue=2&spage=981&epage=984&date=1999&atitle=Effects+of+annealing+on+the+electrical+properties+of+Fe-doped+InPen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.370835en_HK
dc.identifier.scopuseid_2-s2.0-0032620503en_HK
dc.identifier.hkuros41289-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0032620503&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume86en_HK
dc.identifier.issue2en_HK
dc.identifier.spage981en_HK
dc.identifier.epage984en_HK
dc.identifier.isiWOS:000081171800044-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridZhao, YW=55231671600en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridSun, NF=7202556986en_HK
dc.identifier.scopusauthoridSun, TN=7402922751en_HK
dc.identifier.scopusauthoridChen, XD=26642908200en_HK
dc.identifier.scopusauthoridYang, GY=8693019600en_HK
dc.identifier.issnl0021-8979-

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