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Article: Photoinduced Dehydrogenation of Defects in Undoped a-Si:H Using Positron Annihilation Spectroscopy

TitlePhotoinduced Dehydrogenation of Defects in Undoped a-Si:H Using Positron Annihilation Spectroscopy
Authors
Zou, XChan, YCWebb, DPLam, YWHu, YFBeling, CDFung, SWeng, HM
KeywordsPhysics
Issue Date2000
PublisherAmerican Physical Society. The Journal's web site is located at http://prl.aps.org
Citation
Physical Review Letters, 2000, v. 84 n. 4, p. 769-772 How to Cite?
DOI: http://dx.doi.org/10.1103/PhysRevLett.84.769
AbstractWe report changes in variable-energy positron annihilation spectroscopy measurements on undoped hydrogenated amorphous silicon films after light soaking. The change, seen predominantly in the high momentum band of the annihilation radiation, is not reversed by thermal annealing. We suggest, following recent models of the Staebler-Wronski effect, that light exposure induces hydrogen trapped in vacancylikc detects to become mobile in the Si network. The observations place constraints on models of hydrogen motion fitting macroscopic Staebler-Wronski effect kinetics and may help to achieve a definitive description of metastability in a-Si:H.
Persistent Identifierhttp://hdl.handle.net/10722/42194
ISSN
0031-9007
2023 Impact Factor: 8.1
2023 SCImago Journal Rankings: 3.040
ISI Accession Number ID
WOS:000084891700048
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorZou, Xen_HK
dc.contributor.authorChan, YCen_HK
dc.contributor.authorWebb, DPen_HK
dc.contributor.authorLam, YWen_HK
dc.contributor.authorHu, YFen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorWeng, HMen_HK
dc.date.accessioned2007-01-08T02:31:23Z-
dc.date.available2007-01-08T02:31:23Z-
dc.date.issued2000en_HK
dc.identifier.citationPhysical Review Letters, 2000, v. 84 n. 4, p. 769-772en_HK
dc.identifier.issn0031-9007en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42194-
dc.description.abstractWe report changes in variable-energy positron annihilation spectroscopy measurements on undoped hydrogenated amorphous silicon films after light soaking. The change, seen predominantly in the high momentum band of the annihilation radiation, is not reversed by thermal annealing. We suggest, following recent models of the Staebler-Wronski effect, that light exposure induces hydrogen trapped in vacancylikc detects to become mobile in the Si network. The observations place constraints on models of hydrogen motion fitting macroscopic Staebler-Wronski effect kinetics and may help to achieve a definitive description of metastability in a-Si:H.en_HK
dc.format.extent73703 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prl.aps.orgen_HK
dc.relation.ispartofPhysical Review Lettersen_HK
dc.rightsCopyright 2000 by The American Physical Society. This article is available online at https://doi.org/10.1103/PhysRevLett.84.769-
dc.subjectPhysicsen_HK
dc.titlePhotoinduced Dehydrogenation of Defects in Undoped a-Si:H Using Positron Annihilation Spectroscopyen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0031-9007&volume=84&issue=4&spage=769&epage=772&date=2000&atitle=Photoinduced+dehydrogenation+of+defects+in+undoped+a-Si:H+using+positron+annihilation+spectroscopyen_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1103/PhysRevLett.84.769en_HK
dc.identifier.scopuseid_2-s2.0-0000224753en_HK
dc.identifier.hkuros47811-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0000224753&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume84en_HK
dc.identifier.issue4en_HK
dc.identifier.spage769en_HK
dc.identifier.epage772en_HK
dc.identifier.isiWOS:000084891700048-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridZou, X=18234346500en_HK
dc.identifier.scopusauthoridChan, YC=7403676038en_HK
dc.identifier.scopusauthoridWebb, DP=7401528584en_HK
dc.identifier.scopusauthoridLam, YW=7202563950en_HK
dc.identifier.scopusauthoridHu, YF=7407119615en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridWeng, HM=7102468725en_HK
dc.identifier.issnl0031-9007-

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