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Article: A deep level transient spectroscopy study of beryllium implanted n-type 6H-SiC

TitleA deep level transient spectroscopy study of beryllium implanted n-type 6H-SiC
Authors
Chen, XDFung, SBeling, CDGong, MHenkel, TTanoue, HKobayashi, N
KeywordsPhysics engineering
Issue Date2000
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2000, v. 88 n. 8, p. 4558-4562 How to Cite?
DOI: http://dx.doi.org/10.1063/1.1287232
AbstractBeryllium implantation induced defects in 6H-SiC pn junctions have been investigated by deep level transient spectroscopy. Five defect centers labeled BE1, BE2, BE3, BE4, and BE5 have been detected in the temperature range 100-450 K. A comparative study has also been performed in low beryllium doped n-type 6H-SiC, which proved that the BE1, BE2, and BE3 centers are electron traps located at 0.34, 0.44, and 0.53 eV, respectively, below the conduction band edge. On the other hand, the BE4 and BE5 centers have been found to be hole traps which are situated at 0.64 and 0.73 eV, respectively, above the valence band edge. Possible defect configurations associated with these deep levels are discussed. © 2000 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42198
ISSN
0021-8979
2023 Impact Factor: 2.7
2023 SCImago Journal Rankings: 0.649
ISI Accession Number ID
WOS:000089552800015
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorChen, XDen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorGong, Men_HK
dc.contributor.authorHenkel, Ten_HK
dc.contributor.authorTanoue, Hen_HK
dc.contributor.authorKobayashi, Nen_HK
dc.date.accessioned2007-01-08T02:31:28Z-
dc.date.available2007-01-08T02:31:28Z-
dc.date.issued2000en_HK
dc.identifier.citationJournal of Applied Physics, 2000, v. 88 n. 8, p. 4558-4562-
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42198-
dc.description.abstractBeryllium implantation induced defects in 6H-SiC pn junctions have been investigated by deep level transient spectroscopy. Five defect centers labeled BE1, BE2, BE3, BE4, and BE5 have been detected in the temperature range 100-450 K. A comparative study has also been performed in low beryllium doped n-type 6H-SiC, which proved that the BE1, BE2, and BE3 centers are electron traps located at 0.34, 0.44, and 0.53 eV, respectively, below the conduction band edge. On the other hand, the BE4 and BE5 centers have been found to be hole traps which are situated at 0.64 and 0.73 eV, respectively, above the valence band edge. Possible defect configurations associated with these deep levels are discussed. © 2000 American Institute of Physics.en_HK
dc.format.extent80276 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCopyright 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2000, v. 88 n. 8, p. 4558-4562 and may be found at https://doi.org/10.1063/1.1287232-
dc.subjectPhysics engineeringen_HK
dc.titleA deep level transient spectroscopy study of beryllium implanted n-type 6H-SiCen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=88&issue=8&spage=4558&epage=4562&date=2000&atitle=A+deep+level+transient+spectroscopy+study+of+beryllium+implanted+n-type+6H-SiCen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1287232en_HK
dc.identifier.scopuseid_2-s2.0-0001142196en_HK
dc.identifier.hkuros55909-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0001142196&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume88en_HK
dc.identifier.issue8en_HK
dc.identifier.spage4558en_HK
dc.identifier.epage4562en_HK
dc.identifier.isiWOS:000089552800015-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChen, XD=26642908200en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridGong, M=9273057400en_HK
dc.identifier.scopusauthoridHenkel, T=7007164479en_HK
dc.identifier.scopusauthoridTanoue, H=7006255463en_HK
dc.identifier.scopusauthoridKobayashi, N=7404311470en_HK
dc.identifier.issnl0021-8979-

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