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Article: X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices

TitleX-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices
Authors
KeywordsPhysics engineering
Issue Date2000
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2000, v. 77 n. 14, p. 2130-2132 How to Cite?
AbstractWe report on the characterization of thermally induced interdiffusion in InAs/GaAs quantum-dot superlattices with high-resolution x-ray diffraction and photoluminescence techniques. The dynamical theory is employed to simulate the measured x-ray diffraction rocking curves of the InAs/GaAs quantum-dot superlattices annealed at different temperatures. Excellent agreement between the experimental curves and the simulations is achieved when the composition, thickness, and stress variations caused by interdiffusion are taken in account. It is found that the significant In-Ga intermixing occurs even in the as-grown InAs/GaAs quantum dots. The diffusion coefficients at different temperatures are estimated. © 2000 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42199
ISSN
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorXu, SJen_HK
dc.contributor.authorWang, Hen_HK
dc.contributor.authorLi, Qen_HK
dc.contributor.authorXie, MHen_HK
dc.contributor.authorWang, XCen_HK
dc.contributor.authorFan, WJen_HK
dc.contributor.authorFeng, SLen_HK
dc.date.accessioned2007-01-08T02:31:29Z-
dc.date.available2007-01-08T02:31:29Z-
dc.date.issued2000en_HK
dc.identifier.citationApplied Physics Letters, 2000, v. 77 n. 14, p. 2130-2132-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42199-
dc.description.abstractWe report on the characterization of thermally induced interdiffusion in InAs/GaAs quantum-dot superlattices with high-resolution x-ray diffraction and photoluminescence techniques. The dynamical theory is employed to simulate the measured x-ray diffraction rocking curves of the InAs/GaAs quantum-dot superlattices annealed at different temperatures. Excellent agreement between the experimental curves and the simulations is achieved when the composition, thickness, and stress variations caused by interdiffusion are taken in account. It is found that the significant In-Ga intermixing occurs even in the as-grown InAs/GaAs quantum dots. The diffusion coefficients at different temperatures are estimated. © 2000 American Institute of Physics.en_HK
dc.format.extent66479 bytes-
dc.format.extent28672 bytes-
dc.format.extent877894 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.format.mimetypeapplication/pdf-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2000, v. 77 n. 14, p. 2130-2132 and may be found at https://doi.org/10.1063/1.1314298-
dc.subjectPhysics engineeringen_HK
dc.titleX-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlatticesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=77&issue=14&spage=2130&epage=2132&date=2000&atitle=X-ray+diffraction+and+optical+characterization+of+interdiffusion+in+self-assembled+InAs/GaAs+quantum-dot+superlatticesen_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1314298en_HK
dc.identifier.scopuseid_2-s2.0-0001237753en_HK
dc.identifier.hkuros55912-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0001237753&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume77en_HK
dc.identifier.issue14en_HK
dc.identifier.spage2130en_HK
dc.identifier.epage2132en_HK
dc.identifier.isiWOS:000089524900017-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridWang, H=16418028100en_HK
dc.identifier.scopusauthoridLi, Q=7405861869en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridWang, XC=9333737100en_HK
dc.identifier.scopusauthoridFan, WJ=35956227400en_HK
dc.identifier.scopusauthoridFeng, SL=7402531622en_HK
dc.identifier.issnl0003-6951-

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