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Article: Direct determination of free exciton binding energy from phonon-assisted luminescence spectra in GaN epilayers

TitleDirect determination of free exciton binding energy from phonon-assisted luminescence spectra in GaN epilayers
Authors
KeywordsPhysics engineering
Issue Date2002
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2002, v. 81 n. 16, p. 2959-2961 How to Cite?
AbstractInvestigation of variable-temperature longitudinal optical (LO) phonon-assisted luminescence spectra of free excitons and free electrons in heteroepitaxial GaN thin films has been conducted. It is found that thermal broadening of the LO phonon-assisted photoluminescence peaks is much slower than those of the peaks of their parents so that the first-order LO peaks of the free exciton transition and the band-to-band transition can be well resolved even at room temperature, leading to a direct determination of the band A free exciton binding energy as 25.4±0.9meV. At the same time, we demonstrate that the simple hydrogenlike model still is a good approximation to describe the energy level structure of free excitons in GaN. © 2002 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42208
ISSN
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorXu, SJen_HK
dc.contributor.authorLiu, Wen_HK
dc.contributor.authorLi, MFen_HK
dc.date.accessioned2007-01-08T02:31:39Z-
dc.date.available2007-01-08T02:31:39Z-
dc.date.issued2002en_HK
dc.identifier.citationApplied Physics Letters, 2002, v. 81 n. 16, p. 2959-2961-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42208-
dc.description.abstractInvestigation of variable-temperature longitudinal optical (LO) phonon-assisted luminescence spectra of free excitons and free electrons in heteroepitaxial GaN thin films has been conducted. It is found that thermal broadening of the LO phonon-assisted photoluminescence peaks is much slower than those of the peaks of their parents so that the first-order LO peaks of the free exciton transition and the band-to-band transition can be well resolved even at room temperature, leading to a direct determination of the band A free exciton binding energy as 25.4±0.9meV. At the same time, we demonstrate that the simple hydrogenlike model still is a good approximation to describe the energy level structure of free excitons in GaN. © 2002 American Institute of Physics.en_HK
dc.format.extent60115 bytes-
dc.format.extent28672 bytes-
dc.format.extent877894 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.format.mimetypeapplication/pdf-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2002, v. 81 n. 16, p. 2959-2961 and may be found at https://doi.org/10.1063/1.1514391-
dc.subjectPhysics engineeringen_HK
dc.titleDirect determination of free exciton binding energy from phonon-assisted luminescence spectra in GaN epilayersen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=81&issue=16&spage=2959&epage=2961 &date=2002&atitle=Direct+determination+of+free+exciton+binding+energy+from+phonon-assisted+luminescence+spectra+in+GaN+epilayersen_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1514391en_HK
dc.identifier.scopuseid_2-s2.0-79956059457en_HK
dc.identifier.hkuros74808-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79956059457&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume81en_HK
dc.identifier.issue16en_HK
dc.identifier.spage2959en_HK
dc.identifier.epage2961en_HK
dc.identifier.isiWOS:000178460500015-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridLiu, W=54780122500en_HK
dc.identifier.scopusauthoridLi, MF=54780127100en_HK
dc.identifier.issnl0003-6951-

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