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Article: Electron emission from deep level defects EL2 and EL6 in semi-insulating GaAs observed by positron drift velocity transient measurements
Title | Electron emission from deep level defects EL2 and EL6 in semi-insulating GaAs observed by positron drift velocity transient measurements |
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Authors | |
Keywords | Physics engineering |
Issue Date | 2002 |
Publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp |
Citation | Journal of Applied Physics, 2002, v. 92 n. 6, p. 3410-3412 How to Cite? |
Abstract | A ±100 V square wave applied to a Au/semi-insulating SI-GaAs interface was used to bring about electron emission from and capture into deep level defects in the region adjacent to the interface. The electric field transient resulting from deep level emission was studied by monitoring the positron drift velocity in the region. A deep level transient spectrum was obtained by computing the trap emission rate as a function of temperature and two peaks corresponding to EL2 (E a=0.81±0.15 eV) and EL6 (E a=0.30±0.12 eV) have been identified. © 2002 American Institute of Physics. |
Persistent Identifier | http://hdl.handle.net/10722/42209 |
ISSN | 2023 Impact Factor: 2.7 2023 SCImago Journal Rankings: 0.649 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
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dc.contributor.author | Tsia, JM | en_HK |
dc.contributor.author | Ling, CC | en_HK |
dc.contributor.author | Beling, CD | en_HK |
dc.contributor.author | Fung, S | en_HK |
dc.date.accessioned | 2007-01-08T02:31:40Z | - |
dc.date.available | 2007-01-08T02:31:40Z | - |
dc.date.issued | 2002 | en_HK |
dc.identifier.citation | Journal of Applied Physics, 2002, v. 92 n. 6, p. 3410-3412 | - |
dc.identifier.issn | 0021-8979 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/42209 | - |
dc.description.abstract | A ±100 V square wave applied to a Au/semi-insulating SI-GaAs interface was used to bring about electron emission from and capture into deep level defects in the region adjacent to the interface. The electric field transient resulting from deep level emission was studied by monitoring the positron drift velocity in the region. A deep level transient spectrum was obtained by computing the trap emission rate as a function of temperature and two peaks corresponding to EL2 (E a=0.81±0.15 eV) and EL6 (E a=0.30±0.12 eV) have been identified. © 2002 American Institute of Physics. | en_HK |
dc.format.extent | 50497 bytes | - |
dc.format.extent | 9781 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.format.mimetype | text/plain | - |
dc.language | eng | en_HK |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp | en_HK |
dc.relation.ispartof | Journal of Applied Physics | en_HK |
dc.rights | Copyright 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2002, v. 92 n. 6, p. 3410-3412 and may be found at https://doi.org/10.1063/1.1503162 | - |
dc.subject | Physics engineering | en_HK |
dc.title | Electron emission from deep level defects EL2 and EL6 in semi-insulating GaAs observed by positron drift velocity transient measurements | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=92&issue=6&spage=3410&epage=3412 &date=2002&atitle=Electron+emission+from+deep+level+defects+EL2+and+EL6+in+semi-insulating+GaAs+observed+by+positron+drift+velocity+transient+measurements | en_HK |
dc.identifier.email | Ling, CC: ccling@hkucc.hku.hk | en_HK |
dc.identifier.email | Beling, CD: cdbeling@hkucc.hku.hk | en_HK |
dc.identifier.email | Fung, S: sfung@hku.hk | en_HK |
dc.identifier.authority | Ling, CC=rp00747 | en_HK |
dc.identifier.authority | Beling, CD=rp00660 | en_HK |
dc.identifier.authority | Fung, S=rp00695 | en_HK |
dc.description.nature | published_or_final_version | en_HK |
dc.identifier.doi | 10.1063/1.1503162 | en_HK |
dc.identifier.scopus | eid_2-s2.0-18644368289 | en_HK |
dc.identifier.hkuros | 74830 | - |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-18644368289&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 92 | en_HK |
dc.identifier.issue | 6 | en_HK |
dc.identifier.spage | 3410 | en_HK |
dc.identifier.epage | 3412 | en_HK |
dc.identifier.isi | WOS:000177683000071 | - |
dc.publisher.place | United States | en_HK |
dc.identifier.scopusauthorid | Tsia, JM=6507197992 | en_HK |
dc.identifier.scopusauthorid | Ling, CC=13310239300 | en_HK |
dc.identifier.scopusauthorid | Beling, CD=7005864180 | en_HK |
dc.identifier.scopusauthorid | Fung, S=7201970040 | en_HK |
dc.identifier.issnl | 0021-8979 | - |