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Article: Beryllium implantation induced deep level defects in p-type 6h-silicon carbide

TitleBeryllium implantation induced deep level defects in p-type 6h-silicon carbide
Authors
Chen, XDLing, CCFung, SBeling, CDGong, MHenkel, TTanoue, HKobayashi, N
KeywordsPhysics engineering
Issue Date2003
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2003, v. 93 n. 5, p. 3117-3119 How to Cite?
DOI: http://dx.doi.org/10.1063/1.1542687
AbstractBeryllium implantation into p-type 6H-SiC and subsequent thermal annealing were performed. Deep level transient spectroscopy was used to investigate the deep level defects induced by this beryllium-implantation process. Four deep levels were detected in the temperature range 100-500 K. The level BEP1 at Ev+0.41 eV was found to be consistent with the ionization level of the Be acceptor observed in Hall measurements.
Persistent Identifierhttp://hdl.handle.net/10722/42212
ISSN
0021-8979
2021 Impact Factor: 2.877
2020 SCImago Journal Rankings: 0.699
ISI Accession Number ID
WOS:000181307000128
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorChen, XDen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorGong, Men_HK
dc.contributor.authorHenkel, Ten_HK
dc.contributor.authorTanoue, Hen_HK
dc.contributor.authorKobayashi, Nen_HK
dc.date.accessioned2007-01-08T02:31:44Z-
dc.date.available2007-01-08T02:31:44Z-
dc.date.issued2003en_HK
dc.identifier.citationJournal of Applied Physics, 2003, v. 93 n. 5, p. 3117-3119-
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42212-
dc.description.abstractBeryllium implantation into p-type 6H-SiC and subsequent thermal annealing were performed. Deep level transient spectroscopy was used to investigate the deep level defects induced by this beryllium-implantation process. Four deep levels were detected in the temperature range 100-500 K. The level BEP1 at Ev+0.41 eV was found to be consistent with the ionization level of the Be acceptor observed in Hall measurements.en_HK
dc.format.extent52841 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCopyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2003, v. 93 n. 5, p. 3117-3119 and may be found at https://doi.org/10.1063/1.1542687-
dc.subjectPhysics engineeringen_HK
dc.titleBeryllium implantation induced deep level defects in p-type 6h-silicon carbideen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=93&issue=5&spage=3117&epage=3119&date=2003&atitle=Beryllium+implantation+induced+deep+level+defects+in+p-type+6H–silicon+carbideen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1542687en_HK
dc.identifier.scopuseid_2-s2.0-0037351560en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0037351560&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume93en_HK
dc.identifier.issue5en_HK
dc.identifier.spage3117en_HK
dc.identifier.epage3119en_HK
dc.identifier.isiWOS:000181307000128-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChen, XD=26642908200en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridGong, M=9273057400en_HK
dc.identifier.scopusauthoridHenkel, T=7007164479en_HK
dc.identifier.scopusauthoridTanoue, H=7006255463en_HK
dc.identifier.scopusauthoridKobayashi, N=7404311470en_HK
dc.identifier.issnl0021-8979-

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