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Article: Shallow optically active structural defect in wurtzite GaN epilayers grown on stepped 4H-SiC substrates

TitleShallow optically active structural defect in wurtzite GaN epilayers grown on stepped 4H-SiC substrates
Authors
Xu, SJWang, HJCheung, SHLi, QDai, XQXie, MHTong, SY
KeywordsPhysics engineering
Issue Date2003
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2003, v. 83 n. 17, p. 3477-3479 How to Cite?
DOI: http://dx.doi.org/10.1063/1.1623006
AbstractShallow optically active structural defect in wurtzite GaN epilayers grown on stepped 4H-SiC substrates was investigated. The GaN epilayers grown with plasma-assisted molecular-beam epitaxy were optically characterized by photoluminescence and excitation spectra. Results showed that the localized states which were induced by the structural defect located about 100 meV above the maximum valence band of GaN.
Persistent Identifierhttp://hdl.handle.net/10722/42221
ISSN
0003-6951
2021 Impact Factor: 3.971
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID
WOS:000186068400011
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorXu, SJen_HK
dc.contributor.authorWang, HJen_HK
dc.contributor.authorCheung, SHen_HK
dc.contributor.authorLi, Qen_HK
dc.contributor.authorDai, XQen_HK
dc.contributor.authorXie, MHen_HK
dc.contributor.authorTong, SYen_HK
dc.date.accessioned2007-01-08T02:31:53Z-
dc.date.available2007-01-08T02:31:53Z-
dc.date.issued2003en_HK
dc.identifier.citationApplied Physics Letters, 2003, v. 83 n. 17, p. 3477-3479-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42221-
dc.description.abstractShallow optically active structural defect in wurtzite GaN epilayers grown on stepped 4H-SiC substrates was investigated. The GaN epilayers grown with plasma-assisted molecular-beam epitaxy were optically characterized by photoluminescence and excitation spectra. Results showed that the localized states which were induced by the structural defect located about 100 meV above the maximum valence band of GaN.en_HK
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dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.format.mimetypeapplication/pdf-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2003, v. 83 n. 17, p. 3477-3479 and may be found at https://doi.org/10.1063/1.1623006-
dc.subjectPhysics engineeringen_HK
dc.titleShallow optically active structural defect in wurtzite GaN epilayers grown on stepped 4H-SiC substratesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=83&issue=17&spage=3477&epage=3479&date=2003&atitle=Shallow+optically+active+structural+defect+in+wurtzite+GaN+epilayers+grown+on+stepped+4H-SiC+substratesen_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1623006en_HK
dc.identifier.scopuseid_2-s2.0-0242666902en_HK
dc.identifier.hkuros84985-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0242666902&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume83en_HK
dc.identifier.issue17en_HK
dc.identifier.spage3477en_HK
dc.identifier.epage3479en_HK
dc.identifier.isiWOS:000186068400011-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridWang, HJ=8694347500en_HK
dc.identifier.scopusauthoridCheung, SH=13310365400en_HK
dc.identifier.scopusauthoridLi, Q=7405861869en_HK
dc.identifier.scopusauthoridDai, XQ=55237280400en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridTong, SY=24512624800en_HK
dc.identifier.issnl0003-6951-

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