File Download
Links for fulltext
(May Require Subscription)
- Publisher Website: 10.1063/1.1834984
- Scopus: eid_2-s2.0-13644282499
- WOS: WOS:000226778300010
- Find via
Supplementary
- Citations:
- Appears in Collections:
Article: Influence of gaseous annealing environment on the properties of indium-tin-oxide thin films
Title | Influence of gaseous annealing environment on the properties of indium-tin-oxide thin films |
---|---|
Authors | |
Keywords | Physics engineering |
Issue Date | 2005 |
Publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp |
Citation | Journal of Applied Physics, 2005, v. 97 n. 3, article no. 033504 How to Cite? |
Abstract | The influence of postannealing in different gaseous environments on the optical properties of indiu-tin-oxide (ITO) thin films deposited on glass substrates using e-beam evaporation has been systematically investigated. It is found that the annealing conditions affect the optical and electrical properties of the films. Atomic force microscopy, x-ray diffraction, and x-ray photoemission spectroscopy (XPS) were employed to obtain information on the chemical state and crystallization of the films. These data suggest that the chemical states and surface morphology of the ITO film are strongly influenced by the gaseous environment during the annealing process. The XPS data indicate that the observed variations in the optical transmittance can be explained by oxygen incorporation into the film, decomposition of the indium oxide phases, as well as the removal of metallic In. © 2005 American Institute of Physics. |
Persistent Identifier | http://hdl.handle.net/10722/42233 |
ISSN | 2023 Impact Factor: 2.7 2023 SCImago Journal Rankings: 0.649 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Wang, RX | en_HK |
dc.contributor.author | Beling, CD | en_HK |
dc.contributor.author | Fung, S | en_HK |
dc.contributor.author | Djurišic, AB | en_HK |
dc.contributor.author | Ling, CC | en_HK |
dc.contributor.author | Li, S | en_HK |
dc.date.accessioned | 2007-01-08T02:32:07Z | - |
dc.date.available | 2007-01-08T02:32:07Z | - |
dc.date.issued | 2005 | en_HK |
dc.identifier.citation | Journal of Applied Physics, 2005, v. 97 n. 3, article no. 033504 | - |
dc.identifier.issn | 0021-8979 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/42233 | - |
dc.description.abstract | The influence of postannealing in different gaseous environments on the optical properties of indiu-tin-oxide (ITO) thin films deposited on glass substrates using e-beam evaporation has been systematically investigated. It is found that the annealing conditions affect the optical and electrical properties of the films. Atomic force microscopy, x-ray diffraction, and x-ray photoemission spectroscopy (XPS) were employed to obtain information on the chemical state and crystallization of the films. These data suggest that the chemical states and surface morphology of the ITO film are strongly influenced by the gaseous environment during the annealing process. The XPS data indicate that the observed variations in the optical transmittance can be explained by oxygen incorporation into the film, decomposition of the indium oxide phases, as well as the removal of metallic In. © 2005 American Institute of Physics. | en_HK |
dc.format.extent | 151669 bytes | - |
dc.format.extent | 9781 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.format.mimetype | text/plain | - |
dc.language | eng | en_HK |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp | en_HK |
dc.relation.ispartof | Journal of Applied Physics | en_HK |
dc.rights | Copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2005, v. 97 n. 3, article no. 033504 and may be found at https://doi.org/10.1063/1.1834984 | - |
dc.subject | Physics engineering | en_HK |
dc.title | Influence of gaseous annealing environment on the properties of indium-tin-oxide thin films | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=97&spage=033504:1&epage=5&date=2005&atitle=Influence+of+gaseous+annealing+environment+on+the+properties+of+indium-tin-oxide+thin+films | en_HK |
dc.identifier.email | Beling, CD: cdbeling@hkucc.hku.hk | en_HK |
dc.identifier.email | Fung, S: sfung@hku.hk | en_HK |
dc.identifier.email | Djurišic, AB: dalek@hku.hk | en_HK |
dc.identifier.email | Ling, CC: ccling@hkucc.hku.hk | en_HK |
dc.identifier.authority | Beling, CD=rp00660 | en_HK |
dc.identifier.authority | Fung, S=rp00695 | en_HK |
dc.identifier.authority | Djurišic, AB=rp00690 | en_HK |
dc.identifier.authority | Ling, CC=rp00747 | en_HK |
dc.description.nature | published_or_final_version | en_HK |
dc.identifier.doi | 10.1063/1.1834984 | en_HK |
dc.identifier.scopus | eid_2-s2.0-13644282499 | en_HK |
dc.identifier.hkuros | 98201 | - |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-13644282499&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 97 | en_HK |
dc.identifier.issue | 3 | en_HK |
dc.identifier.spage | article no. 033504 | - |
dc.identifier.epage | article no. 033504 | - |
dc.identifier.isi | WOS:000226778300010 | - |
dc.publisher.place | United States | en_HK |
dc.identifier.scopusauthorid | Wang, RX=22136651200 | en_HK |
dc.identifier.scopusauthorid | Beling, CD=7005864180 | en_HK |
dc.identifier.scopusauthorid | Fung, S=7201970040 | en_HK |
dc.identifier.scopusauthorid | Djurišic, AB=7004904830 | en_HK |
dc.identifier.scopusauthorid | Ling, CC=13310239300 | en_HK |
dc.identifier.scopusauthorid | Li, S=7409241368 | en_HK |
dc.identifier.issnl | 0021-8979 | - |