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Article: Anisotropic step-flow growth and island growth of GaN(0001) by molecular beam epitaxy

TitleAnisotropic step-flow growth and island growth of GaN(0001) by molecular beam epitaxy
Authors
Xie, MHSeutter, SMZhu, WKZheng, LXWu, HTong, SY
KeywordsPhysics
Issue Date1999
PublisherAmerican Physical Society. The Journal's web site is located at http://prl.aps.org
Citation
Physical Review Letters, 1999, v. 82 n. 13, p. 2749-2752 How to Cite?
DOI: http://dx.doi.org/10.1103/PhysRevLett.82.2749
AbstractGaN(0001) thin films are grown using radio frequency plasma assisted molecular beam epitaxy. By changing the growth temperature, anisotropic growth rate behavior is observed in both the step-flow growth mode and the 2D island growth mode. Tunneling scanning microscopy reveals, in the step-flow growth mode, strong influences from the growth anisotropy on the shape of the terrace edges, resulting in striking differences between hexagonal and cubic films. In the 2D nucleation growth mode, triangularly shaped islands are formed. The significance of growth anisotropy to growing high quality GaN films is discussed.
Persistent Identifierhttp://hdl.handle.net/10722/42453
ISSN
0031-9007
2023 Impact Factor: 8.1
2023 SCImago Journal Rankings: 3.040
ISI Accession Number ID
WOS:000079348900032
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorXie, MHen_HK
dc.contributor.authorSeutter, SMen_HK
dc.contributor.authorZhu, WKen_HK
dc.contributor.authorZheng, LXen_HK
dc.contributor.authorWu, Hen_HK
dc.contributor.authorTong, SYen_HK
dc.date.accessioned2007-01-29T08:50:21Z-
dc.date.available2007-01-29T08:50:21Z-
dc.date.issued1999en_HK
dc.identifier.citationPhysical Review Letters, 1999, v. 82 n. 13, p. 2749-2752en_HK
dc.identifier.issn0031-9007en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42453-
dc.description.abstractGaN(0001) thin films are grown using radio frequency plasma assisted molecular beam epitaxy. By changing the growth temperature, anisotropic growth rate behavior is observed in both the step-flow growth mode and the 2D island growth mode. Tunneling scanning microscopy reveals, in the step-flow growth mode, strong influences from the growth anisotropy on the shape of the terrace edges, resulting in striking differences between hexagonal and cubic films. In the 2D nucleation growth mode, triangularly shaped islands are formed. The significance of growth anisotropy to growing high quality GaN films is discussed.en_HK
dc.format.extent125062 bytes-
dc.format.extent28672 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prl.aps.orgen_HK
dc.relation.ispartofPhysical Review Lettersen_HK
dc.rightsCopyright 1999 by The American Physical Society. This article is available online at https://doi.org/10.1103/PhysRevLett.82.2749-
dc.subjectPhysicsen_HK
dc.titleAnisotropic step-flow growth and island growth of GaN(0001) by molecular beam epitaxyen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0031-9007&volume=82&issue=13&spage=2749&epage=2752&date=1999&atitle=Anisotropic+Step-Flow+Growth+and+Island+Growth+of+GaN(0001)+by+Molecular+Beam+Epitaxyen_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.emailWu, H: hswu@hkucc.hku.hken_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.identifier.authorityWu, H=rp00813en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1103/PhysRevLett.82.2749en_HK
dc.identifier.scopuseid_2-s2.0-0032619850en_HK
dc.identifier.hkuros50226-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0032619850&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume82en_HK
dc.identifier.issue13en_HK
dc.identifier.spage2749en_HK
dc.identifier.epage2752en_HK
dc.identifier.isiWOS:000079348900032-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridSeutter, SM=6603424542en_HK
dc.identifier.scopusauthoridZhu, WK=7404232249en_HK
dc.identifier.scopusauthoridZheng, LX=7403405881en_HK
dc.identifier.scopusauthoridWu, H=7405584367en_HK
dc.identifier.scopusauthoridTong, SY=24512624800en_HK
dc.identifier.issnl0031-9007-

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