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Article: Influence of interfacial nitrogen on edge charge trapping at the interface of gate oxide/drain extension in metal-oxide-semiconductor transistors

TitleInfluence of interfacial nitrogen on edge charge trapping at the interface of gate oxide/drain extension in metal-oxide-semiconductor transistors
Authors
Chen, TPHuang, JYTse, MSTan, SSAng, CHFung, S
KeywordsPhysics engineering
Issue Date2003
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2003, v. 82 n. 18, p. 3113-3115 How to Cite?
DOI: http://dx.doi.org/10.1063/1.1572471
AbstractThe influence of interfacial nitrogen on edge charge trapping at the interface of gate oxide/drain extension in metal-oxide-semiconductor transistors was investigated. Positive edge charge trapping was observed for both pure and nitrided oxides with an oxide thickness of 6.5 nm. Results showed that nitrogen at the interface enhance the edge charge trapping.
Persistent Identifierhttp://hdl.handle.net/10722/42476
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:000182570000059
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorChen, TPen_HK
dc.contributor.authorHuang, JYen_HK
dc.contributor.authorTse, MSen_HK
dc.contributor.authorTan, SSen_HK
dc.contributor.authorAng, CHen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2007-01-29T08:50:48Z-
dc.date.available2007-01-29T08:50:48Z-
dc.date.issued2003en_HK
dc.identifier.citationApplied Physics Letters, 2003, v. 82 n. 18, p. 3113-3115-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42476-
dc.description.abstractThe influence of interfacial nitrogen on edge charge trapping at the interface of gate oxide/drain extension in metal-oxide-semiconductor transistors was investigated. Positive edge charge trapping was observed for both pure and nitrided oxides with an oxide thickness of 6.5 nm. Results showed that nitrogen at the interface enhance the edge charge trapping.en_HK
dc.format.extent60753 bytes-
dc.format.extent37376 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2003, v. 82 n. 18, p. 3113-3115 and may be found at https://doi.org/10.1063/1.1572471-
dc.subjectPhysics engineeringen_HK
dc.titleInfluence of interfacial nitrogen on edge charge trapping at the interface of gate oxide/drain extension in metal-oxide-semiconductor transistorsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=82&issue=18&spage=3113&epage=3115&date=2003&atitle=Influence+of+interfacial+nitrogen+on+edge+charge+trapping+at+the+interface+of+gate+oxide/drain+extension+in+metal–oxide–semiconductor+transistorsen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1572471en_HK
dc.identifier.scopuseid_2-s2.0-0037514198en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0037514198&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume82en_HK
dc.identifier.issue18en_HK
dc.identifier.spage3113en_HK
dc.identifier.epage3115en_HK
dc.identifier.isiWOS:000182570000059-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridHuang, JY=7407188184en_HK
dc.identifier.scopusauthoridTse, MS=7103352646en_HK
dc.identifier.scopusauthoridTan, SS=24401691400en_HK
dc.identifier.scopusauthoridAng, CH=7102878370en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.issnl0003-6951-

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