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Article: Influence of nitrogen on tunneling barrier heights and effective masses of electrons and holes at lightly-nitrided SiO2/Si interface

TitleInfluence of nitrogen on tunneling barrier heights and effective masses of electrons and holes at lightly-nitrided SiO2/Si interface
Authors
Ng, CYChen, TPLiu, YSun, CQFung, S
KeywordsPhysics engineering
Issue Date2004
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2004, v. 96 n. 10, p. 5912-5914 How to Cite?
DOI: http://dx.doi.org/10.1063/1.1805715
AbstractWe have determined both the effective masses and the barrier heights for electrons and holes in pure SiO2 and lightly nitrided oxides with various nitrogen concentrations up to 4.5 at %. In contrast to previous studies which were usually carried out by assuming a value for either the effective mass or the barrier height, this study does not make such an assumption. The approach is proven to be reliable by examining the result for the well-studied pure SiO2 thin films. It is observed that with the increase of the nitrogen concentration the effective masses increase while both the barrier heights and the energy gap decrease. © 2004 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42497
ISSN
0021-8979
2021 Impact Factor: 2.877
2020 SCImago Journal Rankings: 0.699
ISI Accession Number ID
WOS:000224926000086
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorNg, CYen_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorSun, CQen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2007-01-29T08:51:10Z-
dc.date.available2007-01-29T08:51:10Z-
dc.date.issued2004en_HK
dc.identifier.citationJournal of Applied Physics, 2004, v. 96 n. 10, p. 5912-5914-
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42497-
dc.description.abstractWe have determined both the effective masses and the barrier heights for electrons and holes in pure SiO2 and lightly nitrided oxides with various nitrogen concentrations up to 4.5 at %. In contrast to previous studies which were usually carried out by assuming a value for either the effective mass or the barrier height, this study does not make such an assumption. The approach is proven to be reliable by examining the result for the well-studied pure SiO2 thin films. It is observed that with the increase of the nitrogen concentration the effective masses increase while both the barrier heights and the energy gap decrease. © 2004 American Institute of Physics.en_HK
dc.format.extent66074 bytes-
dc.format.extent37376 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCopyright 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2004, v. 96 n. 10, p. 5912-5914 and may be found at https://doi.org/10.1063/1.1805715-
dc.subjectPhysics engineeringen_HK
dc.titleInfluence of nitrogen on tunneling barrier heights and effective masses of electrons and holes at lightly-nitrided SiO2/Si interfaceen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=96&issue=10&spage=5912&epage=5914&date=2004&atitle=Influence+of+nitrogen+on+tunneling+barrier+heights+and+effective+masses+of+electrons+and+holes+at+lightly-nitrided+SiO2/Si+interfaceen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1805715en_HK
dc.identifier.scopuseid_2-s2.0-9944257101en_HK
dc.identifier.hkuros96336-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-9944257101&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume96en_HK
dc.identifier.issue10en_HK
dc.identifier.spage5912en_HK
dc.identifier.epage5914en_HK
dc.identifier.isiWOS:000224926000086-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridNg, CY=8604409400en_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridLiu, Y=36064444100en_HK
dc.identifier.scopusauthoridSun, CQ=7404248313en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.issnl0021-8979-

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