File Download
Links for fulltext
(May Require Subscription)
- Publisher Website: 10.1109/16.711356
- Scopus: eid_2-s2.0-0032165413
- WOS: WOS:000075486100009
- Find via
Supplementary
- Citations:
- Appears in Collections:
Article: Interface trap generation by FN injection under dynamic oxide field stress
Title | Interface trap generation by FN injection under dynamic oxide field stress |
---|---|
Authors | |
Keywords | Integrated circuit reliability Mos devices Mosfet's Semiconductor device reliability Silicon materials/ devices |
Issue Date | 1998 |
Publisher | I E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16 |
Citation | Ieee Transactions On Electron Devices, 1998, v. 45 n. 9, p. 1920-1926 How to Cite? |
Abstract | Interface trap generation under dynamic (bipolar and unipolar) and dc oxide field stress has been investigated with the charge pumping technique. It is observed that regardless of stress type, whether dc or dynamic (bipolar or unipolar), and the polarity of stress voltage, interface trap generation starts to occur at the voltage at which Fowler-Nordheim (FN) tunneling through the oxide starts to build up. For positive voltage, interface trap generation is attributed to the recombination of trapped holes with electrons and to the bond breaking by the hydrogen (H and H+) released during stressing. For negative voltage, in addition to these two mechanisms, the bond breaking by energetic electrons may also contribute to interface trap generation. The frequency dependence of interface trap generation is also investigated. Interface trap generation is independent of stressing frequency for unipolar stress but it shows a frequency dependence for bipolar stress. ©1998 IEEE. |
Persistent Identifier | http://hdl.handle.net/10722/43240 |
ISSN | 2021 Impact Factor: 3.221 2020 SCImago Journal Rankings: 0.828 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chen, TP | en_HK |
dc.contributor.author | Li, S | en_HK |
dc.contributor.author | Fung, S | en_HK |
dc.contributor.author | Lo, KF | en_HK |
dc.date.accessioned | 2007-03-23T04:41:59Z | - |
dc.date.available | 2007-03-23T04:41:59Z | - |
dc.date.issued | 1998 | en_HK |
dc.identifier.citation | Ieee Transactions On Electron Devices, 1998, v. 45 n. 9, p. 1920-1926 | en_HK |
dc.identifier.issn | 0018-9383 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/43240 | - |
dc.description.abstract | Interface trap generation under dynamic (bipolar and unipolar) and dc oxide field stress has been investigated with the charge pumping technique. It is observed that regardless of stress type, whether dc or dynamic (bipolar or unipolar), and the polarity of stress voltage, interface trap generation starts to occur at the voltage at which Fowler-Nordheim (FN) tunneling through the oxide starts to build up. For positive voltage, interface trap generation is attributed to the recombination of trapped holes with electrons and to the bond breaking by the hydrogen (H and H+) released during stressing. For negative voltage, in addition to these two mechanisms, the bond breaking by energetic electrons may also contribute to interface trap generation. The frequency dependence of interface trap generation is also investigated. Interface trap generation is independent of stressing frequency for unipolar stress but it shows a frequency dependence for bipolar stress. ©1998 IEEE. | en_HK |
dc.format.extent | 133477 bytes | - |
dc.format.extent | 14571 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.format.mimetype | application/pdf | - |
dc.language | eng | en_HK |
dc.publisher | I E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16 | en_HK |
dc.relation.ispartof | IEEE Transactions on Electron Devices | en_HK |
dc.rights | ©1998 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. | - |
dc.subject | Integrated circuit reliability | en_HK |
dc.subject | Mos devices | en_HK |
dc.subject | Mosfet's | en_HK |
dc.subject | Semiconductor device reliability | en_HK |
dc.subject | Silicon materials/ devices | en_HK |
dc.title | Interface trap generation by FN injection under dynamic oxide field stress | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0018-9383&volume=45&issue=9&spage=1920&epage=1926&date=1998&atitle=Interface+trap+generation+by+FN+injection+under+dynamic+oxide+field+stress | en_HK |
dc.identifier.email | Fung, S: sfung@hku.hk | en_HK |
dc.identifier.authority | Fung, S=rp00695 | en_HK |
dc.description.nature | published_or_final_version | en_HK |
dc.identifier.doi | 10.1109/16.711356 | en_HK |
dc.identifier.scopus | eid_2-s2.0-0032165413 | en_HK |
dc.identifier.hkuros | 38912 | - |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-0032165413&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 45 | en_HK |
dc.identifier.issue | 9 | en_HK |
dc.identifier.spage | 1920 | en_HK |
dc.identifier.epage | 1926 | en_HK |
dc.identifier.isi | WOS:000075486100009 | - |
dc.publisher.place | United States | en_HK |
dc.identifier.scopusauthorid | Chen, TP=27169708800 | en_HK |
dc.identifier.scopusauthorid | Li, S=7409241368 | en_HK |
dc.identifier.scopusauthorid | Fung, S=7201970040 | en_HK |
dc.identifier.scopusauthorid | Lo, KF=7402101523 | en_HK |
dc.identifier.issnl | 0018-9383 | - |