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- Publisher Website: 10.1103/PhysRevB.56.R4351
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- WOS: WOS:A1997XV00700015
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Article: Quantized conductance of Si atomic wires
Title | Quantized conductance of Si atomic wires |
---|---|
Authors | |
Keywords | Physics |
Issue Date | 1997 |
Publisher | American Physical Society. The Journal's web site is located at http://prb.aps.org/ |
Citation | Physical Review B (Condensed Matter), 1997, v. 56 n. 8, p. R4351-R4354 How to Cite? |
Abstract | We have performed first-principles pesudopotential calculations of the quantum transport properties of a chain of Si atoms connected to the outside through long leads. By solving a three-dimensional quantum scattering problem we have computed the conductance for several atomic wires with up to eight Si atoms. The Si atomic wires are found to be metallic and we observed quantized conductance in units of 2e2/h. A conductance dip is found to develop near the onset of the second quantized plateau as the number of atoms increases, and this can be explained by the existence of a gap in the density of states when the atomic chain is infinitely long. |
Persistent Identifier | http://hdl.handle.net/10722/43252 |
ISSN | |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Mozos, JL | en_HK |
dc.contributor.author | Wan, CC | en_HK |
dc.contributor.author | Taraschi, G | en_HK |
dc.contributor.author | Wang, J | en_HK |
dc.contributor.author | Guo, H | en_HK |
dc.date.accessioned | 2007-03-23T04:42:13Z | - |
dc.date.available | 2007-03-23T04:42:13Z | - |
dc.date.issued | 1997 | en_HK |
dc.identifier.citation | Physical Review B (Condensed Matter), 1997, v. 56 n. 8, p. R4351-R4354 | en_HK |
dc.identifier.issn | 0163-1829 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/43252 | - |
dc.description.abstract | We have performed first-principles pesudopotential calculations of the quantum transport properties of a chain of Si atoms connected to the outside through long leads. By solving a three-dimensional quantum scattering problem we have computed the conductance for several atomic wires with up to eight Si atoms. The Si atomic wires are found to be metallic and we observed quantized conductance in units of 2e2/h. A conductance dip is found to develop near the onset of the second quantized plateau as the number of atoms increases, and this can be explained by the existence of a gap in the density of states when the atomic chain is infinitely long. | en_HK |
dc.format.extent | 398338 bytes | - |
dc.format.extent | 25600 bytes | - |
dc.format.extent | 5108 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.format.mimetype | application/msword | - |
dc.format.mimetype | text/plain | - |
dc.language | eng | en_HK |
dc.publisher | American Physical Society. The Journal's web site is located at http://prb.aps.org/ | en_HK |
dc.relation.ispartof | Physical Review B (Condensed Matter) | - |
dc.rights | Copyright 1997 by The American Physical Society. This article is available online at https://doi.org/10.1103/PhysRevB.56.R4351 | - |
dc.subject | Physics | en_HK |
dc.title | Quantized conductance of Si atomic wires | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0163-1829&volume=56&issue=8&spage=R4351&epage=R4354&date=1997&atitle=Quantized+conductance+of+Si+atomic+wires | en_HK |
dc.description.nature | published_or_final_version | en_HK |
dc.identifier.doi | 10.1103/PhysRevB.56.R4351 | en_HK |
dc.identifier.scopus | eid_2-s2.0-0001248367 | - |
dc.identifier.hkuros | 38945 | - |
dc.identifier.isi | WOS:A1997XV00700015 | - |
dc.identifier.issnl | 0163-1829 | - |